Dual Frequency Circular Shaped Two Port MIMO Antenna
Design and Development of Portable Oxygen Concentrator
Design and Simulation of Antenna for Foliage Penetration Application
Performance Enhancement of Microstrip Patch Antenna with Slots for 5G Communication
Ergonomic Wheelchair - Stretcher for Enhanced Patient Mobility
The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device
A Study on Globally Asynchronous and locally Synchronous System
Method of 2.5 V RGMII Interface I/O Duty Cycle and Delay Skew Enhancement
Performance Analysis of Modified Source Junctionless Fully Depleted Silicon-on-Insulator MOSFET
Automatic Accident Detection and Tracking of Vehicles by Using MEMS
Efficient Image Compression Algorithms Using Evolved Wavelets
Computer Modeling and Simulation of Ultrasonic Signal Processing and Measurements
Effect of Nano-Coatings on Waste-to-Energy (WTE) plant : A Review
ANFIS Controlled Solar Pumping System
Dual Frequency Circular Shaped Two Port MIMO Antenna
High speed operation, ultra-low power utilization, and efficiency are the need of battery operated handheld devices. This need forces the use of dynamic latch based comparator, having characteristics of using low supply voltage, high speed, and less power utilization. In this paper, the delay analysis of the body driven p-channel metal oxide semiconductor with a low voltage dynamic comparator is presented. The enhancement in the present structure as suggested by the previous work for fast operation in lower supply voltage is presented. Finally, the modification of the structure is proposed with the help of n-channel metal oxide semiconductor driver based design. Simulation results in 90 nm complementary metal oxide semiconductor technology are carried out for previous work and proposed design. The maximum clock frequency of the modified comparator topology can be achieved up to 500 MHz at a supply voltage of 1 V while consuming 67% less power compared to the previously reported topology.
With industrial revolution, gas sensors are widely used to measure and monitor traces of environmentally hazardous gases like carbon monoxide, nitrogen dioxide, ammonia, methane, etc. Several gas sensing techniques, include optical sensitive, Surface Acoustic Waves (SAW), Polymers, semiconductor materials, etc. In semiconductor metal oxide, gas sensor activation of oxide sensing layer requires elevated temperature for which microhotplate (MHP) is used. The main objective of this work is to simulate the performance of MHP and optimize its geometry with different materials and losses before fabrication which save time and money. In this paper, electrothermal behavior of high temperature MHP is simulated using Finite Element Analysis (FEA) software COMSOL Multiphysics which saves a lot of time, cost and material before actual fabrication. Simulation result presents the temperature estimation of microheater of Double spiral, S-shape, Meander geometries of PolySilicon and Platinum materials on stack membrane of SiO2 and Si3N4 mounted on Silicon substrate. Membrane is having 325 x 325 μm2 size and microheater area of 65 x 65 μm2 with 0.5 μm2 thickness. These microheaters are designed for achieving desired temperature of 750 K with minimum voltage and minimum power consumption for both the materials. Total power consumption in MHP depends on various power losses which effects power efficiency and microheater temperature. Conduction loss in dielectric membrane which contributes as power loss component is calculated for various values of dielectric thickness. Loss linearly increases with dielectric thickness and decrease in microheater temperature and with high mechanical stability of stack. Simulation results shows S-shape is preferred for achieving desired temperature with minimum voltage, however minimum power consumption is for Double spiral shape for both Platinum and Polysilicon materials. Dielectric thickness is optimized for minimum conduction losses for achieving desired temperature.
In this paper, the authors have designed a 1bit and 8bit SRAM (Static Random Access Memory) cell using pulsed latch circuit in 45 nm, 90 nm, and 180 nm CMOS technologies with 1.0 V,1.2 V and 1.8 V power supply, respectively. The memory cell has become a basic building element in the field of electronic circuit design. The memory cell consists of wide range of applications. It has good specifications due to its large storage capacity, lower access time, and high speed. SRAM cell has become the topic of research due to its increase demand in laptops, memory cards, and in mobile applications for both on-chip and off-chip memories. So, it is very necessary to reduce its power and delay so as to increase its speed. The main aim of this design approach is to reduce power and delay of the SRAM cell. In this design approach, the two NMOS access transistors are replaced by pulsed latch circuit. The pulsed latch circuit consists of 7 transistors in which it has two differential data inputs and a clock signal, also it has two differential data outputs. In this design approach, it is observed that the power and delay is reduced as compared to that of the conventional SRAM cell design. The proposed design has been designed in S-Edit, simulated using T-Spice and their waveform can be viewed in W-Edit. The proposed design has been carried out in Tanner tool v16.0.
In digital VLSI, sequential elements are most power consuming components. Flip-Flops are the basic storage elements and subsystem of clock distribution network which consume large amount of power. Nowadays for digital design, designers use pipelining techniques to design flip-flop based systems, such as shift registers and register files. In this paper, Pulse Triggered Flip-flop (P-FF) is discussed and Serial in Serial out (SISO) shift register is designed as its application. The main objective of this paper is to optimize the area and power of the shift register for use in Application Specific Integrated Circuits (ASICs) and embedded systems. This paper demonstrates the design of SISO shift registers in three different ways. First shift register is simple in structure and designed only by using P-FF. Second shift register uses clock gating circuit to reduce the switching power consumption and third design of shift register, pulse generator of P-FF is shared among all the latches. These three different SISO shift registers are compared in terms of power dissipation and transistor counts. Shift register has been designed at schematic level and simulated using Tanner EDA at CMOS 32nm BSIM4 technology. The simulation results of SISO shift register with common pulse generator shows effective reduction of power consumption and transistor count.
In this paper, the authors have designed two structures of Photonic crystal fiber. These structures consist of 4 rings of Hexagonal and octagonal air holes. PML and Scattering Boundary condition is applied on these photonic crystal fiber structures. The Finite Element Method of COMSOL Multi Physics is used to design these proposed structures and MATLAB is used to plot the effective refractive index and confinement loss in various cases. It has been observed that the effective refractive index and confinement loss not only varies by change in wavelength, but also by changing the structural parameters of air holes, such as diameter (d) of air holes and pitch (Λ) at 1.55 μm wavelength. The effective area of Hexagonal and Octagonal PCF at 1.55 μm wavelength are 163.45 μm2 and 217.425 μm2 , respectively.
A compact UHF range RFID antenna with Circular Polarization (CP), which is proposed in this paper consists of stair shaped edge with irregular slots on one side and L-shaped feed line on the other. The L-shaped structure improves the Circular Polarization of antenna and provides CP mode at 2.68 GHz under UHF frequency range which is suitable for RFID applications. This antenna also provides bandwidth for RFID reader with -10 dB return loss (reflection coefficient) and have 3 dB axial ratio (AR<3 dB) and impedance bandwidth (VSWR < 2) in the operating frequency band.