i-manager Publications

i-manager's Journal on Electronics Engineering (JELE)

Current Issue Vol. 15 Issue 1

Most Cited

Volume 8 Issue 1 September - November 2017

Research Paper

Channel Performance Optimization of Mimo-Psk Receiver With Space Time Block Coding

Sabuj Sarkar* , Mostafizur Rahman**

* Assistant Engineer, Khulna University of Engineering & Technology, Khulna, Bangladesh.

*** Professor, Department of Electronics and Communication Engineering, Khulna University of Engineering & Technology, Khulna, Bangladesh.

Sarkar, S., and Rahman, M. (2017). Channel Performance Optimization of Mimo-Psk Receiver With Space Time Block Coding. i-manager’s Journal on Electronics Engineering, 8(1), 1-8. https://doi.org/10.26634/jele.8.1.13838

Abstract

Due to the ever increasing requirement of faster data propagation, Multiple Input Multiple Output (MIMO) is an emerging topic in the future generation wireless communications in which spectrum efficiency, network coverage, and link reliability factors can be easily achieved. By combining MIMO and Phase Shift Keying (PSK) modulation, this paper proposes a novel technique termed as MIMO-PSK receiver in order to perform significant improvement in channel capacity in presence of Space-Time Block Coding (STBC) over multipath fading channels. STBC provides full or near full data rate according to its orthogonality principle. Higher order MIMO-PSK receiver configurations are mainly considered for simulating optimal channel performances, i.e. Bit Error Rate (BER) as well channel capacity. From MATLAB simulations, it is clear that optimal channel performance of MIMO-PSK receiver can be obtained with increasing number of antennas as well as higher order PSK modulation.

References

[1]. Alamouti, S. M. (1998). A simple transmit diversity technique for wireless communications. IEEE Journal on Selected Areas in Communications, 16(8), 1451-1458.

[2]. Basar, E., Aygolu, U., Panayirci, E., & Poor, H. V. (2011). Space-time block coded spatial modulation. IEEE Transactions on Communications, 59(3), 823-832.

[3]. Cheng, H. T. & Lok, T. M. (2005, November). Detection schemes for distributed space-time block coding in timevarying wireless cooperative systems. In TENCON 2005 2005 IEEE Region 10 (pp. 1-5). IEEE.

[4]. Haas, H., Costa, E., Filippi, A., & Abellan-Rodriguez, F. (2002). The impact of channel correlation on space-time block codes for different modulation schemes. In Vehicular Technology Conference, 2002. Proceedings. th VTC 2002-Fall. 2002 IEEE 56 (Vol. 3, pp. 1907-1910). IEEE.

[5]. Hong, Y. & Viterbo, E. (2009). Algebraic Multiuser Space–Time Block Codes for a 2´2 MIMO. IEEE Transactions on Vehicular Technology, 58(6), 3062-3066.

[6]. Li, J. & Lim, M. S. (2005, August). Alamouti transmit diversity scheme with a simple diagonal weighting matrix. In Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on (Vol. 2, pp. 1373- 1377). IEEE.

[7]. Li, W. & Beaulieu, N. C. (2006). Effects of channelestimation errors on receiver selection-combining schemes for Alamouti MIMO systems with BPSK. IEEE Transactions on Communications, 54(1), 169-178.

[8]. Liu, J. & Gunawan, E. (2004). Exact bit-error rate analysis for the combined system of beam forming and Alamouti's space-time block code. IEEE Microwave and Wireless Components Letters, 14(8), 398-400.

[9]. Mustafa, H.M. & Hassan, H.E.A., (2012). Performance of Space Time Block Code for Wireless Communications over Multipath Fading Channels. International Journal of Research and Reviews in Computer Science, 3(5), pp. 1836-1840.

[10]. Paulraj, A. J., Gore, D. A., Nabar, R. U., & Bolcskei, H. (2004). An overview of MIMO communications-a key to gigabit wireless. Proceedings of the IEEE, 92(2), 198-218.

[11]. Schober, R., Gerstacker, W. H., & Lampe, L. J. (2004). Performance analysis and design of STBCs for frequencyselective fading channels. IEEE Transactions on Wireless Communications, 3(3), 734-744.

[12]. Tan, C. W. & Calderbank, A. R. (2009). Multiuser detection of Alamouti signals. IEEE Transactions on communications, 57(7), 1-10.

[13]. Tao, M., Li, Q., & Garg, H. K. (2007). Extended spacetime block coding with transmit antenna selection over correlated fading channels. IEEE Transactions on Wireless Communications, 6(9), 3137-3141.

[14]. Tarokh, V., Jafarkhani, H., & Calderbank, A. R. (1999). Space-time block codes from orthogonal designs. IEEE Transactions on Information Theory, 45(5), 1456-1467.

[15]. Tarokh, V., Seshadri, N., & Calderbank, A. R. (1998). Space-time codes for high data rate wireless communication: Performance criterion and code construction. IEEE Transactions on Information Theory, 44(2), 744-765.

[16]. Tran, L. N., Vien, Q. T., & Hong, E. K. (2012). Unique word-based distributed space–time block codes for twohop wireless relay networks. IET Communications, 6(7), 715-723.

[17]. Vien, Q. T., Tran, L. N., & Hong, E. K. (2010). Distributed space-time block code over mixed Rayleigh and Rician frequency-selective fading channels. EURASIP Journal on Wireless Communications and Networking, 2010(1), 385872.

[18]. Zhou, S. & Giannakis, G. B. (2001). Space-time coding with maximum diversity gains over frequencyselective fading channels. IEEE Signal Processing Letters, 8(10), 269-272.

[19]. Zhou, S. & Giannakis, G. B. (2003). Single-carrier space-time block-coded transmissions over frequencyselective fading channels. IEEE Transactions on Information Theory, 49(1), 164-179.

Full Article (HTML)

Pdf

Research Paper

Performance and Analysis of Pwm Inverter Fed 3-Phase Pmsm Drive

Khadim Moin Siddiqui* , Saurabh K. Upadhyay, Saurabh Singh Patel, Ratnesh K. Srivastava, Ram Babu

*Associate Professor and Head, Department of Electrical Engineering, Guru Nanak Institute of Engineering & Management, Punjab, India.

-***Graduate Scholar, Department of Electrical Engineering, IET Lucknow, Dr. APJ Abdul Kalam Technical University, Lucknow, India.

Siddiqui, K.M., Upadhyay, K.S., Singh, S., Srivastava, K.R., and Babu, R. (2017). Performance and Analysis of Pwm Inverter Fed 3-Phase Pmsm Drive. i-manager’s Journal on Electronics Engineering, 8(1), 9-18. https://doi.org/10.26634/jele.8.1.13835

Abstract

In this work, the performance of three phase PWM inverter fed PMSM drive is analyzed on the latest Matlab Simulink environment. Efforts have been made to reduce the distortion and harmonic contents in the current waveform. This has been done by varying parameters of the motor along with suitable variation in the parameters of PI controller. The motor was subjected to a step load. It has also been found that, by providing power supply in discrete form improved the current waveform and also reduced ripples in the torque. This observation paved way to sample the load at the same rate as of that of power supply. The authors have also calculated the Total Harmonic Distortion (THD) in the current waveform by Fast Fourier Transform and finally observed that due to different level of transient in each phase there is a variance in THD.

References

[1]. Bedetti, N., Calligaro, S., & Petrella, R. (2016). Standstill self-identification of flux characteristics for synchronous reluctance machines using novel saturation approximating function and multiple linear regression. IEEE Transactions on Industry Applications, 52(4), 3083- 3092.

[2]. Choi, H. Y., Park, S. J., Kong, Y. K., & Bin, J. G. (2009, November). Design of multi-phase permanent magnet motor for ship propulsion. In Electrical Machines and Systems, 2009. ICEMS 2009. International Conference on (pp. 1-4). IEEE.

[3]. Iyer, N. P. & Zhu, J. (2005). Modeling and simulation of a six step discontinuous current mode inverter fed Permanent Magnet Synchronous Motor drive using SIMULINK. In Power Electronics and Drives Systems, 2005. PEDS 2005. International Conference on (Vol. 2, pp. 1056- 1061). IEEE.

[4]. Lipo, T. A. (1980, September). A d-q model for six phase induction machines. In Proc. Int. Conf. Electrical Machines (Vol. 2, pp. 860-867).

[5]. Mani, M. V. (2006). A quick overview on rotatory Brush and Brushless DC Motors. Motion Control Department, Ingenia, Barcelona, Spain, Tech. Rep.

[6]. Pillay, P. & Krishnan, R. (1991). Application characteristics of permanent magnet synchronous and brushless DC motors for servo drives. IEEE Transactions on Industry Applications, 27(5), 986-996.

[7]. Qiao, M., Zhang, X., & Ren, X. (2002). Research of the mathematical model and sudden symmetrical short circuit of the multi-phase permanent-magnet motor. In Power System Technology, 2002. Proceedings. PowerCon 2002. International Conference on (Vol. 2, pp. 769-773). IEEE.

[8]. Tomer, A. S. & Dubey, S. P. (2016). Response based Comparative Analysis of Two Inverter fed Six Phase PMSM Drive by using PI and Fuzzy Logic Controller. International Journal of Electrical and Computer Engineering, 6(6), 2643-2657.

[9]. Xi, X., Yongdong, L., & Min, L. (2005, May). Performance control of PMSM drives using a self-tuning PID. In Electric Machines and Drives, 2005 IEEE International Conference on (pp. 1053-1057). IEEE.

Full Article (HTML)

Pdf

Research Paper

A Design and Implementation of High Speed Ieee-754 Double Precision Floating Point Unit Based on Vedic Techniques

Rahul Kumar Agrawal* , Rhythm Tyagi, Madan Mohan Tripathi*

-UG Scholar, Department of Electrical Engineering, Delhi Technological University, India.

Professor, Department of Electrical Engineering, Delhi Technological University, India.

Agrawal, R.K., Tyagi, R., Tripathi, M.M. (2017). A Design and Implementation of High Speed Ieee-754 Double Precision Floating Point Unit Based on Vedic Techniques. i-manager’s Journal on Electronics Engineering, 8(1), 19-27. https://doi.org/10.26634/jele.8.1.13836

Abstract

In this paper, a high speed 64-bit double precision Floating Point Unit (FPU) using Vedic mathematics is proposed. In a general processor, the multiplication and division architectures play a crucial role in deciding the overall speed of the system. However, the standard algorithms are sequential units and reduce the performance of the processor. Vedic Mathematics on the other hand offers a new holistic approach of realizing these operations in a combinational unit. In the proposed architecture, the multiplication operation has been implemented using a 54-bit Vedic multiplier based on Urdhva Tiryagbhyam Algorithm while an optimized binary division architecture using Nikhilam Sutra is realized. The proposed method is coded in Verilog High Description Language (HDL), synthesized for Spartan 6 Field-Programmable Gate Array (FPGA) board and simulated using Xilinx Vivado Design Suite. An operating frequency of 205.08 MHz has been attained, which is 92.61% faster than the conventional implementation of a 64-bit floating point unit. The number of slice registers required for the overall realization of the FPU has also been reduced significantly by 94.3% and hence reducing the area requirement of the FPU in a general processor.

References

[1]. Gadakh, S. N. & Khade, A. S. (2016). FPGA Implementation of High Speed Vedic Multiplier. International Conference and Workshop on Electronics and Telecommunication Engineering (ICWET) (pp. 184- 187). DOI: 10.1049/cp.2016.1144.

[2]. Gupta, A., Malviya, U., & Kapse, V. (2012). A novel approach to design high speed arithmetic logic unit based on ancient vedic multiplication technique. International Journal of Modern Engineering Research (IJMER), 2(4), 2695-2698.

[3]. IEEE Computer Society. (1985). IEEE Standard for Binary Floating-Point Arithmetic, IEEE Std 754,1985.

[4]. Kshirsagar, C. A., & Palsodkar, P. M. (2014). An FPGA Implementation of IEEE - 754 Double Precision Floating Point Unit using Verilog. International Journal of Electrical, Electronics, and Data Communication, 2(6), 1-3.

[5]. Maharaja, J. S. S. B. K. T. (1994). Vedic Mathematics, Motilal Banarsidass, New Delhi, India.

[6]. Pramod, P., Nisha, C. K., Saranya, M. K., Nithya, K., & Chithra, S. (2015). Design of Fast Multipliers using Vedic Mathematics. International Journal of Electrical, Electronics and Computer Systems (IJEECS), 3(2).

[7]. Saha, P., Banerjee, A., Bhattacharyya, P., & Dandapat, A. (2011, December). Vedic divider: Novel architecture (ASIC) for high speed VLSI applications. In Electronic System Design (ISED), 2011 International Symposium on (pp. 67-71). IEEE.

[8]. Senapati, R., Bhoi, B. K., & Pradhan, M. (2013, April). Novel binary divider architecture for high speed VLSI applications. In Information & Communication Technologies (ICT), 2013 IEEE Conference on (pp. 675- 679). IEEE.

[9]. Swathi, G. R. & Veena, R. (2014). Design of IEEE-754 Double Precision Floating Point Unit using Verilog, International Journal of Engineering Research & Technology (IJERT), 3(4), 1136-1139.

[10]. Tej, S. B. (2013, December). Vedic divider-A high performance computing algorithm for VLSI applications. In Circuits, Controls and Communications (CCUBE), 2013 International Conference on (pp. 1-5). IEEE.

Full Article (HTML)

Pdf

Research Paper

Implementation of Industrial Iot for Monitoring and Controlling of Temperature, Pressure, and Detection of Volatile Gas Using Raspberry Pi 3b

Akshay S. Kulkarni* , Praveen Kumar V., SRUJAN T. S., Rizwaan R., Puneeth S.

-UG Scholar, Department of Electronics and Communication Engineering, KS School of Engineering and Management, Bengaluru, India.

Assistant Professor, Department of Electronics and Communication Engineering, KS School of Engineering and Management, Bengaluru, India.

Kulkarni, S., Kumar, V., Srujan, T. S., Rizwaan, R., and Puneeth, S. (2017). Implementation of Industrial Iot for Monitoring and Controlling of Temperature, Pressure, and Detection of Volatile Gas Using Raspberry Pi 3b. i-manager’s Journal on Electronics Engineering, 8(1), 28-34. https://doi.org/10.26634/jele.8.1.13834

Abstract

Automation or automatic control is the use of various control systems for operating equipments, such as machinery, processes in industries and other applications with minimal or reduced human intervention. Industrial automation can be achieved by several different means, including mechanical, electrical, electronic, hydraulic, pneumatic, and computers. Here, the authors have implemented Industrial IoT system that allows a single industry operator to control industry appliances with ease using Raspberry Pi 3B. The primary drive for automation using Internet of Things (IoT) is to significantly reduce operating expenditures when sensors and actuators become Internet-enabled devices. The proposed system allows for automation of industrial loads based on continuous monitoring of temperature, pressure, and presence of volatile gas in industrial environment to achieve automation over internet. Here, TruVnc Mobile app is used for monitoring the industrial parameters. User is allowed to control machine/load switching over internet using PubNub interface from anywhere in the world over internet. The Raspberry pi 3 model B processor captures these commands (Controlling signals) by internet and processes the received data to extract user commands. After receiving Sensor data it displays it on a monitor. Also it enables to switch the loads ON/OFF based on received commands to achieve user desired output. Thus Internet of Things (IoT) help in increasing output and automating processes across a lot of industries.

References

[1]. Deore, R. K., Sonawane, V. R., & Satpute, P. H. (2015, December). Internet of Thing based Home Appliances Control. In Computational Intelligence and Communication Networks (CICN), 2015 International Conference on (pp. 898-902). IEEE.

[2]. Mehta, N., Patel, V., Patel, H., & Patoliya, J. (2016, February). Clean Room Indicator for Pharmaceutical production. In Advances in Electrical, Electronics, Information, Communication and Bio-Informatics nd (AEEICB), 2016 2 International Conference on (pp. 305- 309). IEEE.

[3]. Ram, S. K. & Das, B. B. (2016, August). A new approach to design digital controller for three phase active power line conditioner for harmonic compensation using 8051 microcontroller. In Inventive Computation Technologies (ICICT), International Conference on (Vol. 3, pp. 1-5). IEEE.

[4]. Sese, J. T., Ibarra, J. B. G., De Castro-Cruz, K., Borita, J. K., Catacutan, N., Jaranilla, K. et al. (2016, November). Effects of different adsorbent on methane reduction on a garbage bin using MQ4 Gas Sensor. In Control System, th Computing and Engineering (ICCSCE), 2016 6 IEEE International Conference on (pp. 455-459). IEEE.

[5]. Shete, R. & Agrawal, S. (2016, April). IoT based urban climate monitoring using Raspberry Pi. In Communication and Signal Processing (ICCSP), 2016 International Conference on (pp. 2008-2012). IEEE.

[6]. Shi, L., Sun, C., & Li, Q. E. (2011, August). A pressure sensor of the industry. In Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on (Vol. 9, pp. 4597-4599). IEEE.

[7]. Taleb, M. M. A. I. O, (2014). Architecture of Industrial Automation Systems. European Scientific Journal, 10(3), pp. 274-283.

[8]. Tiwari, G. & Kazi, R. (2015). IoT based Interactive Industrial Home Wireless System, Energy Management System and Embedded Data Acquisition System to display on Web page using GPRS, SMS, and E-mail Alert. In Energy Systems and Application, 2015 International Conference on (pp.290-295). IEEE.

[9]. Zhang, F., Liu, M., Zhou, Z., & Shen, W. (2016). An IoTbased online monitoring system for continuous steel casting. IEEE Internet of Things Journal, 3(6), 1355-1363.

Full Article (HTML)

Pdf

Review Paper

Silicon-Germanium Hbt Technology and Applications: A Review

Roberto Marani* , 0**

*Researcher, Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l'Automazione (ISSIA), Bari, Italy.

**Full Professor of Electronics and Head of Electronic Devices Laboratory, Department of Electrical and Information Engineering, Bari, Italy.

Marani, R., and Perri, A.G. (2017). Silicon-Germanium Hbt Technology and Applications: A Review. i-manager’s Journal on Electronics Engineering, 8(1), 35-53. https://doi.org/10.26634/jele.8.1.13837

Abstract

The aim of this review paper is to define the role of SiGe HBTs within the Technology Revolution that will lead to a globally interconnected smart world. At first, the authors have presented the recent developments of SiGe BiCMOS technologies and their applications to unit circuit blocks and integrated solutions. Then modern HBT device structures, technological aspects, scaling strategies, design issues, and future directions are also discussed. TCAD-based simulations predict that SiGe HBTs with cut-off and maximum oscillation frequencies of 780 GHz and 2 THz, respectively will become feasible by the year 2030.

References

[1]. Ahlgren, D. C., Gilbert, M., Greenberg, D., Jeng, J., Malinowski, J., Nguyen-Ngoc, D. et al. (1996, December). Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace. In Electron Devices Meeting, 1996. IEDM'96., International (pp. 859-862). IEEE.

[2]. Ahmed, F., Furqan, M., Aufinger, K., & Stelzer, A. (2016, October). A SiGe-based broadband 100–180-GHz differential power amplifier with 11 dBm peak output power and> 1.3 THz GBW. In Microwave Integrated th Circuits Conference (EuMIC), 2016 11 European (pp. 257-260). IEEE.

[3]. Al-Eryani, J., Knapp, H., Wursthorn, J., Aufinger, K., Li, H., Majied, S. et al. (2016, October). A fundamental 229–240 GHz VCO with integrated dynamic frequency divider chain. In Microwave Conference (EuMC), 2016 th 46 European (pp. 489-492). IEEE.

[4]. Andrews, J. G., Buzzi, S., Choi, W., Hanly, S. V., Lozano, A., Soong, A. C. et al. (2014). What will 5G be? IEEE Journal on Selected Areas in Communications, 32(6), 1065-1082.

[5]. Bai, P., Auth, C., Balakrishnan, S., Bost, M., Brain, R., Chikarmane, V. et al. (2004, December). A 65 nm logic technology featuring 35nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-k ILD and 0.57/spl mu/m/sup 2/SRAM cell. In Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International (pp. 657-660). IEEE.

[6]. Bredendiek, C., Pohl, N., Aufinger, K., & Bilgic, A. (2012, September). Differential signal source chips at 150 GHz and 220 GHz in SiGe bipolar technologies based on Gilbert-Cell frequency doublers. In Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE (pp. 1-4). IEEE.

[7]. Chevalier, P., Avenier, G., Ribes, G., Montagné, A., Canderle, E., Céli, D. et al. (2014, December). A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f T/370 GHz f MAX HBT and high-Q millimeter-wave passives. In Electron Devices Meeting (IEDM), 2014 IEEE International (pp. 3-9). IEEE.

[8]. Chevalier, P., Lacave, T., Canderle, E., Pottrain, A., Carminati, Y., Rosa, J. et al. (2012, October). Scaling of SiGe BiCMOS technologies for applications above 100 GHz. In Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE (pp. 1-4). IEEE.

[9]. Chevalier, P., Meister, T. F., Heinemann, B., Van Huylenbroeck, S., Liebl, W., Fox, A. et al. (2011, October). Towards THz SiGe HBTs. In Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE (pp. 57-65). IEEE.

[10]. Chevalier, P., Pourchon, F., Lacave, T., Avenier, G., Campidelli, Y., Depoyan, L. et al. (2009, October). A Conventional Double-Polysilicon FSA-SEG Si/SiGe: C HBT Reaching 400 GHz f . In Bipolar/BiCMOS Circuits and MAX Technology Meeting, 2009. BCTM 2009, IEEE (pp. 1-4). IEEE.

[11]. Chiang, P. Y., Wang, Z., Momeni, O., & Heydari, P. (2014). A silicon-based 0.3 THz frequency synthesizer with wide locking range. IEEE Journal of Solid-State Circuits, 49(12), 2951-2963.

[12]. Chidambaram, P. R., Smith, B. A., Hall, L. H., Bu, H., Chakravarthi, S., Kim, Y. et al.(2004, June). 35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS. In VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on (pp. 48-49). IEEE.

[13]. Cisco. (n.d.). Retrieved from http://www.cisco.com/

[14]. Daembkes, H., Herzog, H. -J., Jorke, H., Kibbel, H., Kasper, E., (1986). The n-channel SiGe/Si modulationdoped field-effect transistor, IEEE Transactions on Electron Devices, 33(5), 633-638.

[15]. Daneshgar, S. & Buckwalter, J. F. (2015, October). A 22 dBm, 0.6 mm² D-Band SiGe HBT Power Amplifier using Series Power Combining Sub-Quarter-Wavelength Baluns. In Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE (pp. 1-4). IEEE.

[16]. Del Alamo, J. A. & Swanson, R. M. (1986). Forwardbias tunneling: a limitation to bipolar device scaling. IEEE Electron Device Letters, 7(11), 629-631.

[17]. Del Rio, D., Gurutzeaga, I., Rezola, A., Sevillano, J. F., Velez, I., Gunnarsson, S. E. et al. (2017). A Wideband and High-Linearity E-B and Transmitter Integrated in a 55-nm SiGe Technology for Backhaul Point-to-Point 10-Gb/s Links. IEEE Transactions on Microwave Theory and Techniques, 65(8), 2990-3001.

[18]. Fritsche, D., Leufker, J. D., Tretter, G., Carta, C., & Ellinger, F. (2015). A Low-Power Broadband 200 GHz Down- Conversion Mixer with Integrated LO-Driver in 0.13 m SiGe BiCMOS. IEEE Microwave and Wireless Components Letters, 25(9), 594-596.

[19]. Furqan, M., Ahmed, F., Feger, R., Aufinger, K., & Stelzer, A. (2016, May). A 120-GHz wideband FMCW radar demonstrator based on a fully-integrated SiGe transceiver with antenna-in-package. In Microwaves for Intelligent Mobility (ICMIM), 2016 IEEE MTT-S International Conference on (pp. 1-4). IEEE.

[20]. Furqan, M., Ahmed, F., Heinemann, B., & Stelzer, A. (2017). A 15.5-dBm 160-GHz high-gain power amplifier in SiGe BiCMOS technology. IEEE Microwave and Wireless Components Letters, 27(2), 177-179.

[21]. Grzyb, J., Statnikov, K., Sarmah, N., Heinemann, B., & Pfeiffer, U. R. (2016). A 210–270-GHz circularly polarized FMCW radar with a single-lens-coupled SiGe HBT chip. IEEE Transactions on Terahertz Science and Technology, 6(6), 771-783.

[22]. Han, R., Jiang, C., Mostajeran, A., Emadi, M., Aghasi, H., Sherry, H. et al. (2015). A SiGe terahertz heterodyne imaging transmitter with 3.3 mW radiated power and fully-integrated phase-locked loop. IEEE Journal of Solid-State Circuits, 50(12), 2935-2947.

[23]. Heinemann, B., Rücker, H., Barth, R., Bärwolf, F., Drews, J., Fischer, G. G. et al. (2016, December). SiGe HBT with f /f of 505 GHz/720 GHz. In Electron Devices x max Meeting (IEDM), 2016 IEEE International (pp. 3-1). IEEE.

[24]. Hock, G., Kab, N., Hackbarth, T., Konig, U., & Kohn, E. (2000, April). 0.1/spl mu/m T-gate p-type Ge/SiGe MODFETs. In Silicon Monolithic Integrated Circuits in RF Systems, 2000. Digest of Papers. 2000 Topical Meeting on (pp. 156-158). IEEE.

[25]. Hoffman, J., Shopov, S., Chevalier, P., Cathelin, A., Schvan, P., & Voinigescu, S. P. (2016). 55-nm SiGe BiCMOS distributed amplifier topologies for time-interleaved 120- Gb/s fiber-optic receivers and transmitters. IEEE Journal of Solid-State Circuits, 51(9), 2040-2053.

[26]. Hoyt, J. L., Nayfeh, H. M., Eguchi, S., Aberg, I., Xia, G., Drake, T. et al. (2002, December). Strained silicon MOSFET technology. In Electron Devices Meeting, 2002. IEDM'02. International (pp. 23-26). IEEE.

[27]. ICCSS. (2017). Retrieved from http://isscc.org/2017/ wp-content/uploads/sites/11/2017/05/ISSCC2017 AdvanceProgram.pdf

[28]. Iyer, S. S., Patton, G. L., Delage, S. S., Tiwari, S., & Stork, J. M. C. (1987). Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy. In Electron Devices Meeting, 1987 International (pp. 874-876). IEEE.

[29]. Iyer, S. S., Patton, G. L., Stork, J. M., Meyerson, B. S., & Harame, D. L. (1989). Heterojunction bipolar transistors using Si-Ge alloys. IEEE Transactions on Electron Devices, 36(10), 2043-2064.

[30]. Jahn, M., Aufinger, K., Meister, T. F., & Stelzer, A. (2012, June). 125 to 181 GHz fundamental-wave VCO chips in SiGe technology. In Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE (pp. 87-90). IEEE.

[31]. Jahn, M., Stelzer, A., & Hamidipour, A. (2010, May). Highly integrated 79, 94, and 120-GHz SiGe radar frontends. In Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International (pp. 1324-1327). IEEE.

[32]. Jiang, C., Mostajeran, A., Han, R., Emadi, M., Sherry, H., Cathelin, A. et al. (2016). A fully integrated 320 GHz coherent imaging transceiver in 130 nm SiGe BiCMOS. IEEE Journal of Solid-State Circuits, 51(11), 2596-2609.

[33]. Kim, D. H. & Rieh, J. S. (2011, December). A SiGe140- GHz low power G m-boosted down-conversion mixer. In Microwave Conference Proceedings (APMC), 2011 Asia- Pacific (pp. 1126-1129). IEEE.

[34]. Kim, D. H. & Rieh, J. S. (2012). A 135 GHz differential active star mixer in SiGe BiCMOS technology. IEEE Microwave and Wireless Components Letters, 22(8), 409- 411.

[35]. Lanzerotti, L. D., Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T., & Magee, C. (1996, December). Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation. In Electron Devices Meeting, 1996. IEDM'96., International (pp. 249-252). IEEE.

[36]. Liang, R., Wang, J., Xu, J. (2009). A 240 GHz singlechip radar transceiver in a SiGe bipolar technology with on-chip antennas and ultra-wide tuning range. Tsinghua Science and Technology, 14(1), 62-67.

[37]. Lin, H. C., & Rebeiz, G. M. (2013, October). A 200- 245 GHz balanced frequency doubler with peak output power of +2 dBm. In Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE (pp. 1- 4). IEEE.

[38]. Lin, H.-C. & Rebeiz, G. M. ( 2014). A 110–134-GHz SiGe Amplifier With Peak Output Power of 100–120 mW. IEEE Transactions on Microwave Theory and Techniques, 62(12), 2990-3000.

[39]. López, I. G., Rito, P., Petousi, D., Zimmermann, L., Kroh, M., Lischke, S. et al. (2017, January). A 40 Gb/s PAM- 4 monolithically integrated photonic transmitter in 0.25 ?m SiGe: C BiCMOS EPIC platform. In Silicon Monolithic th Integrated Circuits in RF Systems (SiRF), 2017 IEEE 17 Topical Meeting on (pp. 30-32). IEEE.

[40]. Lu, W., Kuliev, A., Koester, S. J., Wang, X. W., Chu, J. O., Ma, T. P. et al. (2000). High performance 0.1/spl mu/m gate-length p-type SiGe MODFET's and MOS-MODFET's. IEEE Transactions on Electron Devices, 47(8), 1645-1652.

[41]. Marani, R. & Perri, A. G. (2012). Comparison of electro-thermal performance of heterojunction bipolar transistors based on Si/SiGe and AlGaAs/GaAs, International Journal of Research and Reviews in Applied Sciences, 12(2), 164-172.

[42]. Masini, G., Colace, L., Assanto, G., Luan, H. C., Wada, K., & Kimerling, L. C. (1999). High responsitivity near infrared Ge photodetectors integrated on Si. Electronics Letters, 35(17), 1467-1468.

[43]. Mertens, H., Magnée, P. H. C., Donkers, J. M., van Dalen, R., Brunets, I., Van Huylenbroeck, S. et al. (2012, September). Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow. In Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE (pp. 1-4). IEEE.

[44]. Mi, Q., Xiao, X., Sturm, J. C., Lenchyshyn, L. C., & Thewalt, M. L. W. (1992). Room-temperature 1.3-and 1.5- mu m electroluminescence from Si/Si/sub 1-x/Ge/sub x/quantum wells. IEEE Transactions on Electron Devices, 39(11), 2678.

[45]. Muralidharan, S., Wu, K., & Hella, M. (2016, January). A 110–132GHz VCO with 1.5 dBm peak output power and 18.2% tuning range in 130nm SiGe BiCMOS for D-Band transmitters. In Silicon Monolithic Integrated th Circuits in RF Systems (SiRF), 2016 IEEE 16 Topical Meeting on (pp. 64-66). IEEE.

[46]. O'Neill, A. G. & Antoniadis, D. A. (1995, September). High speed deep sub-micron MOSFET using high mobility strained silicon channel. In Solid State Device Research th Conference, 1995. ESSDERC'95. Proceedings of the 25 European (pp. 109-112). IEEE.

[47]. Osten, H. J., Knoll, D., Heinemann, B., Rucker, H., & Tillack, B. (1999). Carbon doped SiGe heterojunction bipolar transistors for high frequency applications. In Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999 (pp. 109-116). IEEE.

[48]. Pekarik, J. J., Adkisson, J., Gray, P., Liu, Q., Camillo- Castillo, R., Khater, M. et al. (2014, September). A 90 nm SiGe BiCMOS technology for mm-wave and highperformance analog applications. In Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE (pp. 92-95). IEEE.

[49]. People, R. (1986). Physics and applications of Ge x Si 1-x/Si strained-layer heterostructures. IEEE Journal of Quantum Electronics, 22(9), 1696-1710.

[50]. Perri, A. G. (2016). Dispositivi Elettronici Avanzati, 1 Edn. Progedit, Bari, Italy.

[51]. Pfeiffer, U. R., Öjefors, E., & Zhao, Y. (2010, February). A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz. In Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International (pp. 416-417). IEEE.

[52]. Preisler, E., Talor, G., Howard, D., Yan, Z., Booth, R., Zheng, J. et al. (2011, October). A millimeter-wave capable SiGe BiCMOS process with 270 GHz FMAX HBTs designed for high volume manufacturing. In Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE (pp. 74-78). IEEE.

[53]. Rücker, H., Heinemann, B., & Fox, A., (2012). Half- Terahertz SiGe BiCMOS technology, Proc. 2012 IEEE Meeting on Silicon Monolithic Integrated Circuits in RF (pp. 133-136).

[54]. Sadhu, B., Tousi, Y., Hallin, J., Sahl, S., Reynolds, S., Renström, Ö. et al. (2017, February). 7.2 A 28GHz 32- element phased-array transceiver IC with concurrent dual polarized beams and 1.4 degree beam-steering resolution for 5G communication. In Solid-State Circuits Conference (ISSCC), 2017 IEEE International (pp. 128- 129). IEEE.

[55]. Sarmah, N., Chevalier, P., & Pfeiffer, U. R. (2013). 160- GHz Power Amplifier Design in Advanced SiGe HBT Technologies with F in Excess of 10 dBm. IEEE sat Transactions on Microwave Theory and Techniques, 61(2), 939-947.

[56]. Sarmah, N., Grzyb, J., Statnikov, K., Malz, S., Vazquez, P. R., Föerster, W. et al. (2016). A fully integrated 240-GHz direct-conversion quadrature transmitter and receiver chipset in SiGe technology. IEEE Transactions on Microwave Theory and Techniques, 64(2), 562-574.

[57]. Schmalz, K., Winkler, W., Borngraber, J., Debski, W., Heinemann, B., & Scheytt, J. C. (2010). A Subharmonic Receiver in SiGe Technology for 122 GHz Sensor Applications. IEEE Journal of Solid-State Circuits, 45(9), 1644-1656.

[58]. Schröter, M. Rosenbaum, T., Chevalier, C., Heinemann, B., Voinigescu, S. P., Preisler, E. et al. (2017). SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. Proceedings of the IEEE, 105(6), 1068-1086.

[59]. Shopov, S., Hasch, J., Chevalier, P., Cathelin, A., & Voinigescu, S. P. (2015, October). A 240 GHz Synthesizer in 55 nm SiGe BiCMOS. In Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE (pp. 1-4). IEEE.

[60]. Slotboom, J. W., Streutker, G., Pruijmboom, A., & Gravesteijn, D. J. (1991). Parasitic energy barriers in SiGe HBTs. IEEE Electron Device Letters, 12(9), 486-488.

[61]. Song, S., Lee, S., Ryum, B., & Yoon, E. (1998, July). Facet Formation in Selectively Overgrown Silicon by Reduced Pressure Chemical Vapor Deposition. In Microprocesses and Nanotechnology Conference, 1998 International (pp. 240-241). IEEE.

[62]. Statnikov, K., Grzyb, J., Heinemann, B., & Pfeiffer, U. R. (2015). 160-GHz to 1-THz multi-color active imaging with a lens-coupled SiGe HBT chip-set. IEEE Transactions on Microwave Theory and Techniques, 63(2), 520-532.

[63]. STMicroelectronics. (n.d.). Retrieved from http://www.st.com/content/st_com/en.html

[64]. Thompson, S. E., Sun, G., Choi, Y. S., & Nishida, T. (2006). Uniaxial-process-induced strained-Si: Extending the CMOS roadmap. IEEE Transactions on Electron Devices, 53(5), 1010-1020.

[65]. Trivedi, V. P., John, J. P., Young, J., Dao, T., Morgan, D., Ma, R. et al. (2016, September). A 90 nm BiCMOS technology featuring 400GHz f SiGe: C HBT. In MAX Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016 IEEE (pp. 60-63). IEEE.

[66]. Voinigescu, S. P., Shopov, S., Bateman, J., Farooq, H., Hoffman, J., & Vasilakopoulos, K. (2017). Silicon millimeter-wave, terahertz, and high-speed fiber-optic device and benchmark circuit scaling through the 2030 ITRS horizon. Proceedings of the IEEE, 105(6), 1087-1104.

[67]. Voinigescu, S. P., Tomkins, A., Dacquay, E., Chevalier, P., Hasch, J., Chantre, A. et al. (2013). A study of SiGe HBT signal sources in the 220-330-GHz range. IEEE Journal of Solid-State Circuits, 48(9), 2011-2021.

[68]. Wanner, R., Lachner, R., Olbrich, G. R., & Russer, P. (2007, June). A SiGe monolithically integrated 278 GHz push-push oscillator. In Microwave Symposium, 2007. IEEE/MTT-S International (pp. 333-336). IEEE.

[69]. Welser, J., Hoyt, J. L., & Gibbons, J. F. (1994). Electron mobility enhancement in strained-Si n-type metal-oxidesemiconductor field-effect transistors. IEEE Electron Device Letters, 15(3), 100-102.

[70]. Winkler, W., Debski, W., Heinemann, B., Korndorfer, F., Rucker, H., Schmalz, K. et al. (2009, September). 122 GHz low-noise-amplifier in SiGe technology. In ESSCIRC, 2009.

[71]. Yishay, R. B., Shumaker, E., & Elad, D. (2015). A 122- 150 GHz LNA with 30 dB gain and 6.2 dB noise figure in SiGe BiCMOS technology. Proc. 2015 Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 15-17).

[72]. Yoon, D. & Rieh, J. S. (2014). A 200 GHz heterodyne image receiver with an integrated VCO in a SiGe BiCMOS technology. IEEE Microwave and Wireless Components Letters, 24(8), 557-559.

[73]. Yoon, D., Seo, M. G., Song, K., Kaynak, M., Tillack, B., & Rieh, J. S. (2017). 260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology. Electronics Letters, 53(3), 194-196.

[74]. Yuan, H.-C., Jiang, N., Ma, Z., & Croke, E.T. (2006). High-gain multi-finger power n-MODFET on Si substrate. Electronics Letters, 42(6), 3375-377.

[75]. Zhang, B., Xiong, Y. Z., Wang, L., Hu, S., Lim, T. G., Zhuang, Y. Q. et al. (2010, November). 130-GHz gainenhanced SiGe low noise amplifier. In Solid State Circuits Conference (A-SSCC), 2010 IEEE Asian (pp. 1-4). IEEE.

[76]. Zhao, Y., Heinemann, B., & Pfeiffer, U. R. (2011, October). Fundamental mode colpitts VCOs at 115 and 165-GHz. In Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011 IEEE (pp. 33-36). IEEE.

i-manager's Journal on Electronics Engineering (JELE)

Current Issue Vol. 15 Issue 1

Most Read

Most Cited

Volume 8 Issue 1 September - November 2017

Channel Performance Optimization of Mimo-Psk Receiver With Space Time Block Coding

Sabuj Sarkar* , Mostafizur Rahman**

* Assistant Engineer, Khulna University of Engineering & Technology, Khulna, Bangladesh. *** Professor, Department of Electronics and Communication Engineering, Khulna University of Engineering & Technology, Khulna, Bangladesh.

Sarkar, S., and Rahman, M. (2017). Channel Performance Optimization of Mimo-Psk Receiver With Space Time Block Coding. i-manager’s Journal on Electronics Engineering, 8(1), 1-8. https://doi.org/10.26634/jele.8.1.13838

Abstract

References

References

Full Article (HTML)

Pdf

Performance and Analysis of Pwm Inverter Fed 3-Phase Pmsm Drive

Khadim Moin Siddiqui* , Saurabh K. Upadhyay**, Saurabh Singh Patel***, Ratnesh K. Srivastava****, Ram Babu*****

*Associate Professor and Head, Department of Electrical Engineering, Guru Nanak Institute of Engineering & Management, Punjab, India. **-*****Graduate Scholar, Department of Electrical Engineering, IET Lucknow, Dr. APJ Abdul Kalam Technical University, Lucknow, India.

Siddiqui, K.M., Upadhyay, K.S., Singh, S., Srivastava, K.R., and Babu, R. (2017). Performance and Analysis of Pwm Inverter Fed 3-Phase Pmsm Drive. i-manager’s Journal on Electronics Engineering, 8(1), 9-18. https://doi.org/10.26634/jele.8.1.13835

Abstract

References

Full Article (HTML)

Pdf

A Design and Implementation of High Speed Ieee-754 Double Precision Floating Point Unit Based on Vedic Techniques

Rahul Kumar Agrawal* , Rhythm Tyagi**, Madan Mohan Tripathi***

*-**UG Scholar, Department of Electrical Engineering, Delhi Technological University, India. ***Professor, Department of Electrical Engineering, Delhi Technological University, India.

Agrawal, R.K., Tyagi, R., Tripathi, M.M. (2017). A Design and Implementation of High Speed Ieee-754 Double Precision Floating Point Unit Based on Vedic Techniques. i-manager’s Journal on Electronics Engineering, 8(1), 19-27. https://doi.org/10.26634/jele.8.1.13836

Abstract

References

References

Full Article (HTML)

Pdf

Implementation of Industrial Iot for Monitoring and Controlling of Temperature, Pressure, and Detection of Volatile Gas Using Raspberry Pi 3b

Akshay S. Kulkarni* , Praveen Kumar V.**, SRUJAN T. S.***, Rizwaan R.****, Puneeth S.*****

*-****UG Scholar, Department of Electronics and Communication Engineering, KS School of Engineering and Management, Bengaluru, India. *****Assistant Professor, Department of Electronics and Communication Engineering, KS School of Engineering and Management, Bengaluru, India.

Abstract

References

References

Full Article (HTML)

Pdf

Silicon-Germanium Hbt Technology and Applications: A Review

Roberto Marani* , 0**

*Researcher, Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l'Automazione (ISSIA), Bari, Italy. **Full Professor of Electronics and Head of Electronic Devices Laboratory, Department of Electrical and Information Engineering, Bari, Italy.

Marani, R., and Perri, A.G. (2017). Silicon-Germanium Hbt Technology and Applications: A Review. i-manager’s Journal on Electronics Engineering, 8(1), 35-53. https://doi.org/10.26634/jele.8.1.13837

Abstract

References

References

Full Article (HTML)

Pdf

* Assistant Engineer, Khulna University of Engineering & Technology, Khulna, Bangladesh.

*** Professor, Department of Electronics and Communication Engineering, Khulna University of Engineering & Technology, Khulna, Bangladesh.

Khadim Moin Siddiqui* , Saurabh K. Upadhyay, Saurabh Singh Patel, Ratnesh K. Srivastava, Ram Babu

*Associate Professor and Head, Department of Electrical Engineering, Guru Nanak Institute of Engineering & Management, Punjab, India.

-***Graduate Scholar, Department of Electrical Engineering, IET Lucknow, Dr. APJ Abdul Kalam Technical University, Lucknow, India.

Rahul Kumar Agrawal* , Rhythm Tyagi, Madan Mohan Tripathi*

-UG Scholar, Department of Electrical Engineering, Delhi Technological University, India.

Professor, Department of Electrical Engineering, Delhi Technological University, India.

Akshay S. Kulkarni* , Praveen Kumar V., SRUJAN T. S., Rizwaan R., Puneeth S.

-UG Scholar, Department of Electronics and Communication Engineering, KS School of Engineering and Management, Bengaluru, India.

Assistant Professor, Department of Electronics and Communication Engineering, KS School of Engineering and Management, Bengaluru, India.

*Researcher, Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l'Automazione (ISSIA), Bari, Italy.

**Full Professor of Electronics and Head of Electronic Devices Laboratory, Department of Electrical and Information Engineering, Bari, Italy.