Dual Frequency Circular Shaped Two Port MIMO Antenna
Design and Development of Portable Oxygen Concentrator
Design and Simulation of Antenna for Foliage Penetration Application
Performance Enhancement of Microstrip Patch Antenna with Slots for 5G Communication
Ergonomic Wheelchair - Stretcher for Enhanced Patient Mobility
The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device
A Study on Globally Asynchronous and locally Synchronous System
Method of 2.5 V RGMII Interface I/O Duty Cycle and Delay Skew Enhancement
Performance Analysis of Modified Source Junctionless Fully Depleted Silicon-on-Insulator MOSFET
Automatic Accident Detection and Tracking of Vehicles by Using MEMS
Efficient Image Compression Algorithms Using Evolved Wavelets
Computer Modeling and Simulation of Ultrasonic Signal Processing and Measurements
Effect of Nano-Coatings on Waste-to-Energy (WTE) plant : A Review
ANFIS Controlled Solar Pumping System
Dual Frequency Circular Shaped Two Port MIMO Antenna
Many samples of amorphous silicon germanium thin films had been fabricated using vacuum thermal deposition technique. Some of the samples are deposited on glass substrates; the others are on Si wafers. The effect of annealing temperature and germanium quantity on the structural and optoelectronic properties are studied and explained. The results obtained from X-ray diffraction show that films are deposited as amorphous structure. The films deposited on glass o substrate start polycrystalline transformation at annealing temperature around 600 C, while the others deposited on Si o o wafer start the transformation near to 655 C and with best results at 830 C. Increasing the germanium quantity from x= 0 to x= 0.3 leads to the reduction of optical energy gap. The behavior of x=0.3 germanium sample gives, somewhat, better quantum efficiency, higher photogenerated current with reasonable output voltage, but higher leakage current. The quantum efficiency tends to decrease with the increase of the wavelength λ and the absorption coefficient α increases with the increase of the quantity of Ge.
A dual-band bandpass filter based on open loop triangular ring resonator filter is designed in this paper. The filter has the characteristics of compact structure, low insertion loss, and ease of fabrication, since no defected ground structure is used. Based on the current design schemes, the design is planar and has controlled dual-band filter. Several attenuation poles in the stop band are realized to improve the selectivity of the proposed bandpass filter. Stubs are added to the structure to improve the s-parameter performance of the filter. The proposed filter is designed and simulated in Agilent ADS. The experimented results were in good agreement with the simulated results.
A new realization of Differential Voltage Current Conveyor (DVCC) is presented in this paper. It uses CMOS inverters operating in transconductance mode of operation. The port relationships have been analytically modelled and are verified through SPICE simulations using TSMC 0.18 μm CMOS process parameters. Larger bandwidth, ability to operate at lower supply voltage and synthesis using digital CMOS inverters are the key advantages of the proposed realization over the traditional DVCC. The usability of the proposed DVCC is illustrated through an application.
In this paper, a compact Dual-band Band Pass Filter (DBBPF) have been presented. The designing of filter is done from open loop coupled resonator and partial step impedance resonator coupling. Two open loop resonators are coupled to generate the first band bandpass filter. The second band is generated by using the partial stepped impedance resonator without joint, but by coupling. The center frequencies of the designed filter are 1.83 GHz and 2.94 GHz. The designing procedure of filter is simple. The insertion loss in pass bands are low as well as shows better out of band rejection. Two reflection zeros in each pass band is created as compared to the existing filter. The overall response of the proposed filter is relatively better than the previous one.
Memristor is a novel two-port circuit element with a memory, as device that can be used in many applications, such as memory, logic, and neuromorphic systems. As a passive circuit element, the memristor would be a useful tool to analyse circuit behavior via simulation. SPICE model is an appropriate way to describe the real device operation. In this paper, a SPICE model of memristor is incorporated with threshold logic circuit for nonlinear dopant drift. Various window functions have been proposed in nonlinear ion drift memristor devices. The circuit analysis of the proposed memristor models are studied by investigating and characterizing the physical electronic and behavioral properties of memristor device. The simulation output should have a current voltage hysteresis curve, which looks like a bow tie. The loop, maps the switching behavior of the device and makes comparison of these memristor implemented circuit design between different types of memristor window models. The research verifies the proposed threshold memristor model and the possibilities of implementing memristor model in practical analog circuit.
In this paper, performance analysis of different structures of organic solar cell is represented. Organic Photovoltaic (OPV) solar cell is recently progressing at a rapid pace due to its low cost, simple manufacturing processing, flexibility and large area devices for future technology. In order to develop efficient and economical photovoltaic cells with good electrical and optical properties, more attention is given to development of better materials and novel structures. Therefore, in this paper different structures of organic solar cell by using different organic materials have been simulated and studied in order to find the best material for the device. The performance of OPVs is discussed on the basis of its basic performance parameters, i.e., short circuit current density, open circuit voltage, fill factor, and power conversion efficiency. The simulation of OPVs is performed in Silvaco ATLAS TCAD tool. Basic equations used by the software is also covered in this paper. This paper shows that bulk heterojunction has good performance.