i-manager's Journal on Electronics Engineering (JELE)


Volume 5 Issue 3 March - May 2015

Research Paper

Design of FIR Filter for Efficient FPGA Implementation

S. V. Padmajarani* , 0**
* Professor and HOD, Department of Electronics and Communication Engineering, Sree Venkateswara College of Engineering, A.P, India.
** Principal, Sree Venkateswara College of Engineering and Technology, Chittoor, A.P, India.
Padmajarani, S.V. , and Muralidhar, M. (2015). Design Of FIR Filter For Efficient FPGA Implementation. i-manager's Journal on Electronics Engineering, 5(3), 1-10. https://doi.org/10.26634/jele.5.3.3392

Abstract

FIR filters are basic building blocks in Digital Signal Processing applications, require computationally efficient multiply and accumulate operations so the blocks with the desired characteristics have to be chosen carefully. The multiplier is generally slow and occupies large area, the adder also contributes to long delay when the length of the addition is more. Improving the speed results mostly in large areas, usually they conflict with each other. The signal processing applications consume considerable amount of energy. Hence there is a need for low power, high speed, low area circuits for Digital Signal Processing applications. The aim of this paper is to implement a low power, high speed, area efficient FIR filter. Multiply and Accumulate technique is used for multiplier design and the addition and accumulation operations are performed by Parallel Prefix Adders. Some of the available Parallel Prefix Adder architectures and the hybrid architecture of Parallel prefix adder is used here. The implementation is done for 4-tap FIR filter using Xilinx 14.5 version, with the targeted device of Spartan3E FPGA. The experimental results show that the implemented FIR filter using hybrid parallel prefix adder is efficient in area, consume low power and has high speed compared to existing parallel prefix adder models.

Research Paper

An Efficient Architecture For Single Precision Floating Point Multiplier Using Various Algorithms

K. Charan Kumar* , Sunil Kumar K**
* Assistant Professor, Department of Electronics and Communication Engineering, Sree Vidyanikethan Engineering College (Autonomous), Tirupati.
** B.E Student, Department of Electronics and Communication Engineering, Sree Vidyanikethan Engineering College (Autonomous), Tirupati.
Kumar, K.C., and Kumar, K.S., (2015). An Efficient Architecture For Single Precision Floating Point Multiplier Using Various Algorithms. i-manager's Journal on Electronics Engineering, 5(3), 11-21. https://doi.org/10.26634/jele.5.3.3393

Abstract

This paper presents the design and comparison of the high speed single precision binary floating point multiplier using IEEE-754 format implemented through the Faster Dadda, Vedic from Dadda and the modified Booth algorithm. The Faster Dadda algorithm utilizes the parallel independent column compression technique and the Hybrid adder. The Vedic from Dadda is the concept of utilizing the Dadda to get higher order multiplier through Vedic concept. Integer multiplication can be inefficient and costly, in time and hardware, depending on the representation of signed numbers. The modified Booth algorithm uses the encoding techniques which minimize the partial products. These single precision Floating point multipliers based on IEEE 754 are implemented using VHDL and they are targeted for Xilinx Spartan-3E FPGA. The performances of these multipliers are analysed in terms of speed, area and area-delay product.

Research Paper

An Efficient Design Of XOR Gate And Its Applications Using QCA

D. Ajitha* , K. V. Ramanaiah**, V. Sumalatha***
* Assistant Professor, Department of Electronics and Communication Engineering, SITAMS, Chittoor
** Associate Professor & HOD, Department of Electronics and Communication Engineering, YSR Engineering College, Proddatur.
*** Professor, Department of Electronics and Communication Engineering, JNTUA College of Engineering, Ananthapuramu
Ajitha , D., Ramanaiah, K.V., and Sumalatha, V. (2015). An Efficient Design Of XOR Gate And Its Applications Using QCA. i-manager's Journal on Electronics Engineering, 5(3), 22-29. https://doi.org/10.26634/jele.5.3.3394

Abstract

As a substitute for CMOS, innovation of quantum cellular automata was anticipated by Lent et al, to represent exemplary cell automata with quantum dots. Quantum Cellular Automata (QCA) may be a progressive innovation that endeavors the certain nano level issues to perform computing. Its potential advantages are high speed, high device density, and low power dissipation. This paper presents the design of XOR gate with the least number of cells; furthermore the circuit appearance is simple. Exploitation of this novel XOR gate leads to the development of combinational circuits like Half Adder, Full Adder, Parity Generator and Parity Checker etc., which were developed effectively in a single layer structure with less number of cells, area and delay, as compared to the earlier designs. This paper mainly focusses on the construction of optimized combinational circuits without using cross-overs in QCA. Further, the simulation results are presented.

Research Paper

A Novel Pliant Nanogenerator Made Of PDMS and ZnO Nanoparticles

Mareddi Bharathkumar* , Palagani Yellappa**, D. Revanth***
*-*** M.Tech Student, VLSI, Department of Electronics and Communication Engineering, Sree Vidyanikethan Engineering College, Tirupathi.
Bharathkumar, M., Yellappa, P., and Revanth, D. (2015). A Novel Pliant Nanogenerator Made Of PDMS and ZnO Nanoparticles. i-manager's Journal on Electronics Engineering, 5(3), 30-34. https://doi.org/10.26634/jele.5.3.3395

Abstract

In this paper, a novel pliant nanogenerator made of PDMS (polydimethylsiloxane) and ZnO nanoparticles is presented. In this device, ZnO nanoparticles are combined with PDMS to form a nanogenerator. PDMS is a flexible kind of material, which is used to form flexible kind of materials and ZnO is a piezoelectric material which exhibits piezoelectricity. A nanogenerator converts mechanical energy into electrical energy. Mechanical energy refers to energy that we are getting from the surroundings like mechanical pressure, mechanical vibrations, etc. By using this energy we can charge batteries of mobile phones and operate smaller electronic devices through wireless power transmission and also it can give endless power in wireless sensor applications. Now a days people are mainly facing problems with power and low battery power. So, to avoid these problems, energy harvesting is playing a main role in industries. Our work indicates the realization of plaint nanogenerator made of ZnO nanoparticles and PDMS and it has some important and interesting applications in energy harvesting. The applications are mainly for low power electronic devices.

Research Paper

A Tunnel Diode Body Contact SOI MOSFET For Low Power Digital Application

Nitu Rao* , VimalKumar Mishra**, R. K. Chauhan***
* PG Scholar, Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, UP, India.
** Research Scholar, Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, UP, India.
*** Professor, Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, UP, India.
Rao, N., Mishra, V.K., and Chauhan, R.K. (2015). A Tunnel Diode Body Contact SOI MOSFET For Low Power Digital Application. i-manager's Journal on Electronics Engineering, 5(3), 35-38. https://doi.org/10.26634/jele.5.3.3396

Abstract

In this paper Tunnel Diode Body Contact (TDBC) SOI p-MOSFET with low off-state leakage current is proposed for low power -13 digital application. The device shows off-state current with a drain voltage of 0.5V as about equal to 3.37×10 A -4 9 (33.7pA) and on-state current as about equal to 1.5×10 A (0.15mA) so that on to off-state current ratio is about 10 . This paper also includes the study of different type of SOI MOSFET namely Partially Depleted SOI (PD SOI), Full Depleted SOI (FD SOI) for low power digital application. This paper also includes the comparison between Partially Depleted TDBCS SOI n- MOSFET and proposed TDBC SOI p-MOSFET.