Investigation of Temperature Sensitive Electrical Properties of Manganese-Zinc Ferrites
Effect of TiO2 Modifier Oxide on a B2O3 Glass System
Synthesis, Structural Characterization and DC Conductivity Study of (PMMA+PEG) Polymer Blend Films
Erbium Rare-Earth Metal Schottky Contact to P-Type Si and its Temperature-Dependent Current-Voltage Characteristics
Study of Moderate Temperature Plasma Nitriding of Inconel 601 Alloy
Study of Moderate Temperature Plasma Nitriding of Inconel 601 Alloy
Exact Solution of an Unsteady Buoyancy Force Effects on MHD Free Convective Boundary Layer Flow of Non-Newtonian Jeffrey Fluid
Enhancement of Mechanical Properties with Nano Polymer Composites
Synthesis and Characterization of SnO2 Nanoparticles
Mapping and Forecasting the Land Surface Temperature in Response to the Land Use and Land Cover Changes using Machine Learning Over the Southernmost Municipal Corporation of Tamilnadu, India
In this paper, Syntherized Zinc-Barium-Borate glasses are doped with various concentration of titanium ion and are characterized by an XRD. The starting material of the glass system is ZnO-BaO-B2O3:TiO2 glasses, which are prepared by conventional melt quenching technique. Densities are measured. Optical absorption spectra and FTIR spectra were recorded at room temperature. Optical absorption studies indicate that the titanium ions do exist in Ti3+ and Ti4+ state. As the content of TiO2 increases, Ti3+ ions acts as modifiers and these may induce NBO’s in the glass network and reduce the samll portion of Ti4+ ions to Ti3+ ions. The IR spectral studies indicate that the structure of these glasses consist of BO3 and BO4 groups randomly connected with linkages B-O-B, Zn-O-Zn, B-O-Zn. Finally, the structural changes in the host glass are analyzed with a small variation in the TiO2 concentration. From the results, it can be concluded that the effects of Ti3+ ions in lead borate glasses is dominated by Ti4+ ions.
A temperature dependent current-voltage characterization of the Er/p-type Si Schottky diode has been carried out in the temperature range of 200–425 K. The diode exhibited a good rectification behavior with a rectification rate of 7.7×105 at room temperature. The Schottky barrier parameters of Er/p-type Si Schottky diode, such as barrier height and ideality factor showed strong temperature dependence. The barrier height and ideality factor decreased and increased, respectively, with decrease in temperature, indicating that the current transport mechanism in Er/p-Si Schottky diode is other than thermionic emission. This behavior of barrier height and ideality factor with the temperature is associated with the existence of the barrier in homogeneity at the metal-semiconductor interface. The barrier inhomogeneities interpreted under the assumption of Gaussian distribution indicated the presence of a double barrier distribution with a transition occurring at 300 K. The Richardson plot interpreted with the Gaussian distribution approach yields a Richardson constant of 17.1 Acm-2 K-2 in the high temperature region that closely matched with the theoretical value of 32 Acm-2 K-2 for p-type Si.
Keeping pace with facets of nanotechnology and its applications in the field of development of smart instrumentation to cater today’s needs and future requirements of various sectors, sensor is the key portion of the measurement system, which responds directly to the physical variables that need to be measured. Therefore, one should opt for proper sensor of better characteristics, nanoparticle spinel Manganese-Zinc ferrites have been synthesized by co-precipitation method. The formation of the materials is confirmed by X-ray powder diffraction and FTIR absorption technology. The results of X-ray diffraction investigation confirm the formation of a single phase composition with the average particle size from 40 nm to 48 nm. Temperature dependent electrical properties of the compositions of MgxZn1-xFe2O4 nano ferrites were investigated for suitability of these materials as a sensing element for designing of sensors. The sensors developed, are employing thick film technology. Measure the DC electrical resistivity of the pelletized compositions and shows the semiconducting behavior, which is attributed to the electron hopping mechanism. This electrical conductivity exhibits the influence of magnetic ordering at curie temperature. The curie temperature values depict the compositional dependence. The electrical resistivity shows a negative temperature coefficient with temperature, hence the materials could be used to design temperature sensors. The results of implementation are interpreted in this paper.
The films of Poly Methyl Methacrylate (PMMA), Poly Ethylene Glycol (PEG) and a blend of these two polymers (PMMA and PEG) have been prepared by using well known solution casting method. The complexation of the prepared polymer blend films have been confirmed by recording the X-Ray Diffraction (XRD) spectra in these samples. Sharp peaks of the XRD patterns appear at 21.80 and 23.40, which indicate that the PEG was completely crystallized during the polymerization process. The humps around 14.20, attributed to the poorly crystallized PMMA. The surface morphology was examined by Scanning Electron Microscopy (SEM). The FTIR spectra of polymer blend (PMMA+PEG) showed several changes in the absorption band positions compared to pure PMMA. As a result, the FTIR analysis confirmed the constitution of both the blend components and the possible interaction between the components. The DSC studies indicate the melting temperature (Tm) and heat flow. The pure PMMA has a broad melting temperature around 152 0C. the melting temperatures (Tm) of PMMA+PEG blend films with different ratios are observed to decrease when compared to pure PMMA. The temperature dependence ionic conductivity follows the Arrhenius rule in the temperature range of 303 to 373 K. DC conductivity studies have shown 3.16X10-4 S/cm for the blend of PMMA+PEG (60:40) at 100 0C.
Inconel 601 is a widely used material in the nuclear and aerospace industries due to its superior chemical and thermal properties. However, there has been relatively less study on the plasma nitriding of Inconel 601 at moderate temperatures. Therefore, the current study reports on the plasma ion nitriding of Inconel 601 alloys in the lowtemperature regime, ranging approximately from 350°C to 450°C. The development of the nitrided layer and its microstructure was examined using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis was conducted using a laboratory machine (Panalytical X'Pert Pro) with a Cu-Kα X-ray source (1.54 Å). To assess the effect of plasma nitriding on the alloy's surface properties, Micro-hardness Measurements, and a Wear Test (pin on disk) were performed. It was concluded that the nitriding process enhances the surface hardness. The XRD measurements indicated that this was due to the formation of Chromium Nitride (CrN) and the epsilon (ε) phase on the nitrided surface.
An experimental study has been done on amorphous Fe78Gd2B20 (S1), Fe76Gd4B20 (S2), and Fe74Gd6B20 (S3) alloys to understand their electrical, phase transformation, and magnetic properties. Four Probe Technique (FPT), Differential Scanning Calorimetry (DSC), X-Ray Diffraction (XRD), and Vibration Sample Magnetometer (VSM) were used to characterize the samples. Resistance versus temperature curve of the fresh sample Fe78Gd2B20 (S1) showed a sudden drop around 800 K, indicating the amorphous for crystalline transformation of the sample. The resistivity of samples S1, S2, and S3 at room temperature was found to be 273.3 µΩ-cm, 242.1 µΩ-cm and 147 µΩ-cm, respectively. Temperature Coefficient of Resistance (TCR) of the samples S1, S2 and S3 was found to be 1.38 x 10-4 K-1,1.40 x 10-4 K-1 and 2.60 x10-4 K-1, respectively. The phase transformation and structural studies have been done using Differential Scanning Calorimetry (DSC) in the temperature range of 30 0C – 1000 0C. The DSC curve of sample S1 showed an exothermic sharp peak around 555 0C (828 K), indicating the amorphous to crystalline transformation. Thus, sample S1 showed single step crystallization. Samples S2, and S3 showed multi step (growth of different phases) crystallization. XRD studies showed the presence of α-Fe phase in the crystallized S1 sample. From VSM studies, the coercive field (H ) of the samples S1, S2, and S3 was found to be 0.00 Oe', 0.10 Oe', 1.69 Oe and the saturation magnetization (M ) was found to be 4.911 emu, 0.897 emu, 0.679 emu, respectively.
