A temperature dependent current-voltage characterization of the Er/p-type Si Schottky diode has been carried out in the temperature range of 200–425 K. The diode exhibited a good rectification behavior with a rectification rate of 7.7×10⁵ at room temperature. The Schottky barrier parameters of Er/p-type Si Schottky diode, such as barrier height and ideality factor showed strong temperature dependence. The barrier height and ideality factor decreased and increased, respectively, with decrease in temperature, indicating that the current transport mechanism in Er/p-Si Schottky diode is other than thermionic emission. This behavior of barrier height and ideality factor with the temperature is associated with the existence of the barrier in homogeneity at the metal-semiconductor interface. The barrier inhomogeneities interpreted under the assumption of Gaussian distribution indicated the presence of a double barrier distribution with a transition occurring at 300 K. The Richardson plot interpreted with the Gaussian distribution approach yields a Richardson constant of 17.1 Acm^-2 K^-2 in the high temperature region that closely matched with the theoretical value of 32 Acm^-2 K^-2 for p-type Si.