Loss Distribution Methodology with a Sense Of Emission Dispatch
Low Power Optimization Technique Based Linear Feedback Shift Register
Leakage Power Reduction Using Multi Modal Driven Hierarchical Power Mode Switches
Validation of IOV chain using OVM Technique
Performance of Continuous and Discontinuous Space Vector Pwm Technique for Open End Winding Induction Motor Drive
Electronic Circuit Design for Electromagnetic Compliance through Problem-Based Learning
Trioinformatics: The Innovative and Novel Logic Notation That Defines, Explains, and Expresses the Rational Application of The Law of Trichotomy for Digital Instrumentation and Circuit Design
Design Of a Novel Gated 5T SRAM Cell with Low Power Dissipation in Active and Sleep Mode
A Two Stage Power Optimized Implantable Neural Amplifier Based on Cascoded Structures
An Efficient Hybrid PFSCL based Implementation of Asynchronous Pipeline
As IC technologies move forward into sub-16 nm domains, ESD protection design is rapidly becoming a big IC design challenge. Interconnects inherently forms part of any ESD protection network. Without careful and quantitative design of metal interconnects, it would not be possible to achieve robust whole-chip ESD protection circuit. Usually, a failed metal interconnect forms an connection. ESD stress results in the permanent change in the interconnects resistance and the electro migration lifetime reduction. To optimize the interconnects of ESD devices and networks, the EDA software should be used. It performs electrical simulation and is capable to analyzing the large complex metal interconnects in the standalone cells and small blocks. In this paper, we analyze and optimize the metal interconnects in standalone I/O cell and small I/O bank with respect to CDM ESD stress using simulations in the industrial EDA tool. The layouts of these cells were implemented in 16 nm FinFet technology with 9M metal stack suitable for flip chip and wire bond applications. Both GDS and CCI based flows were applied. The effect of the ESD current distribution at the contact area of the anode and cathode and its accuracy of were investigated. Finally, the recommendations for interconnects (metal frame) optimization in the I/O cells with respect to CDM ESD stress were elaborated.
In this paper, band-pass/low-pass bi-quad filter realizations are proposed. The designed current-mode filters contain single input and two outputs based on two current differencing transconductance amplifiers (CDTAs) and only two grounded capacitors without any resistors can synchronically operate. The low-pass (LP) and the band-pass (BP) filter responses of the proposed realization are investigated. The pole angular frequency ω0 and bandwidth ω0/Q of the circuit are separately and electronically adjustable. Simulation results are performed with LTspice Simulator using 0.18 μm TSMC CMOS process parameters. Based on this study, simulation and theoretical results are in harmony for the proposed circuits.
The qualitative dynamical behavior of an electronic oscillator based on Van der Pol equation is studied with an inherent delay attributed due to finite propagation time and processing time of signal. The stability governing equations have been obtained analytically. In addition to this, the dynamics of the system has been simulated numerically. Though the inherent delay is generally small, the study has been extended for higher values of delay also. Numerical simulation results are found to be consistent with the analytical predictions. The behavior of the modified system beyond the stable region has also been explored using nonlinear tool like bifurcation diagram and chaotic behavior has been found with proper parameter values.
This paper presents low power radiation hardened cells. In this paper, two designs are proposed namely Interleaving Stacked Cell 12T (ILS 12T) and Radiation Hardened by Design 14T (RHBD 14T) SRAM cell design, in order to make the cell tolerant to single event upset and partially tolerant to double node upset. The new designed SRAM cell is ineffective to both 0-1 and 1-0 upset. The simulation software Cadence Virtuoso simulation tool is employed and it analysed a reduction in power.
This paper presents a design for Gate-based ternary content-addressable memory (G-TCAM), utilizing G-AETCAM cells, which yields the location of given input information. The G-AETCAM cells utilizes flip-flop as memory component and control rationale hardware comprising of rationale entryways. One G-AETCAM cell encodes the input and put away the output into one encoded bit which brings about a match-line subsequent to passing from the input. G-AETCAM architecture is area efficient in terms of transistor count and speed of operations is high than the available TCAM architectures. The cascaded G-AETCAM cells are divided as banks, by considering each row as single bank of whole memory. The decoder logic used for memory design is modified by using reversible logic gate technique. Here, HL gate has been used instead of Line Decoder