Design and Implementation of Robot Assisted Arduino Based Object Recognition and Sorting
Wireless Charging System for Electric Vehicle
Embedded System-Based Enhanced Smart Security Systems for Intelligent Monitoring Applications: A Review
Arduino-Based Vehicle Collision Detection and Warning System
WiFireBot: Smart ESP32 Based Surveillance Car with Temperature and Fire Detection
Verilog Based UART System Design
IoT based Smart Agriculture Monitoring Framework with Automation
Intel ® Processor Architectural and Integrated Development Environment Exploration
An Integrated Model of Digital Fuel Indicator and GPS Tracking System for Vehicles
Designing of an Embedded system for Wireless Sensor Network for Hazardous Gas leakage control for industrial Application
Hardware Implementation of Artificial Neural Networks
Fault Analysis on Grid Connected MPPT BasedPhotovoltaic System
High Efficiency Hybrid Intelligent Street Lighting Using A Zigbee Network And Sensors
Design of Dual-Band Bandpass Filter Using Interdigital Embedded Open Loop Triangular Resonator Loaded with Stubs
License Plate Localization Using Novel Recursive Algorithm And Pixel Count Method
A series of unfortunate incidents have been taking place for women. Problem may come from any direction, such as walking on the road after the work or while they go alone. For these issues, the authors have introduced a device which ensures the safety of women. This project suggests a new perspective to use technology to protect women in case of trouble. This device resembles a normal watch which can track the location of victim using GPS and sends emergency messages using GSM to their emergency contact, police control room, or women helpline service. The specifications for the watch include Arduino microcontroller, sensors that detects the blood pressure, temperature, and pressure, and a camera. The watch provides all features such as unbreakable, waterproof and self sense that help the victim in any kind of emergency situation. It does not require a smartphone unlike other applications. This watch with all features will leave no stone unturned to help the victim in any situation.
This paper presents a performance analysis of the novel features offered by Dual- Metal Gate (DMG) Modified Source Fully Depleted Silicon-On-Insulator (MS FD SOI) MOSFET. The problem that arises in the use of polysilicon (poly-Si) gate material is that the depletion region below the gate increases causing higher gate resistance. Dual-metal gate technology is one approach that employs a Dual Metal Gate (DMG) with suitable mid-gap work function to alleviate the above mentioned issue. The electrical performance of DMG MS FD SOI MOSFET has been compared with the single gate MS FD SOI MOSFET. The DMG structure shows high immunity towards suppression of short channel effects and it has been found that the device is also showing low off-state leakage current, low subthreshold slope, and high drive current. Moreover, the device is optimized using work function engineering at different gate metals. The structure of DMG has been simulated and analyzed using ATLAS device simulator.
The Fully Depleted Silicon-On-Insulator (FD SOI) MOSFETs have been already proved as a favorable CMOS technology node beyond 100 nm and the concept of source modification has been adopted in order to improve the electrical controllability of the device. The one of the major challenges in the design of FD SOI MOS device is the appropriate selection of front and back oxide (BOX) thickness. As the selection of front oxide, with proper thickness and material, is a pathway to avoid off-state gate tunneling to conquer various off-state leakages. While, the buried oxide (BOX) layer is dominant to overcome short channel effects and to reduce drain electric field penetration towards the SOI/BOX interface. This paper demonstrates the impact of front and back oxide (BOX) thickness variations on performance of modified source FD SOI MOSFET at 50 nm gate length. The impact of front and back oxide (BOX) thickness variations have been analytically evaluated by using twodimensional surface potential and drain current model, and verified against the simulated results. It has been verified that the device exhibits more uniform electric field in the channel. That assures low off-state leakage current and reduced shortchannel effects in the device. The Ion to Ioff ratio of the device is found to be 1010 and hence the device is suitable for low power digital applications. The device has also been designed and simulated using TCAD device simulator.
This paper presents a microwave switchable filter between Band Pass and Band Stop responses. The structure is compact as compared to traditional structures and has no via or DGS in it. The band pass filter uses an interdigital structure and two hairpins attached in a cascaded manner and the band stop filter is designed by shorting finger of the interdigital structure. The band pass filter allows the frequencies from 4.4 to 11.6 GHz and the band stop filter stops the interference of C-Band. This filter is reconfigurable. The filter is reconfigured from one response to another by using a switch. A PN junction diode is used as a switch. This type of filter finds its application where both band pass and band stop filters are required in the same system. To eliminate the high power interference close to the desired signal in a high interference environment, the filter can be used in the band stop mode and in a low interference environment band pass filter is used. So this type of filter can be used to overcome the problem of interference. The structure is designed on FR4 substrate.
In this paper, a miniaturized narrow-band Band Pass Filter (BPF) is designed using Inter-Digital Structure (IDS) loaded slowwave resonator. The IDS loaded in the resonator is able to reduce the size and shift of the spurious frequency towards higher frequency. The resonating frequency, fo of the proposed resonator has its first harmonics at 3.6 fo . The narrow-band BPF using the proposed resonator shows insertion loss less than 0.03 dB with center frequency at 1.74 GHz and with first harmonics at 3.67 GHz (3.77 fo). The proposed filter is designed on RT/Duroid substrate with dielectric constant 10.8 and thickness of 1.27 mm. The proposed resonator shows smaller size than traditional slow-wave resonator and half and quarter wavelength of transmission line resonator.
This paper presents a design of dual-band bandpass filter with good stopband performance and high selectivity at the edges of passband by using interdigital embedded open loop triangular resonator structure loaded with stubs. The structure is less complex and easy to fabricate since no via or defected ground structure is used. Coupled stubs are loaded to the resonating structure to improve the stopband performance of proposed filter. Interdigital structure is embedded to the resonating structure loaded with stubs to improve second passband and stopband performance of proposed filter by realizing inter-stage coupling of interdigital capacitor in the resonator. A dual band BPF is designed for various applications in microwave communication systems at 5.6 and 13.7 GHz. The pass bands can be conveniently tuned to desired frequencies by controlling the corresponding resonator dimensions. The design topology and performance of the proposed filter is validated by electromagnetic simulator Agilent ADS. The measured results agree well with the simulated results.
