Effect Of Compositional Variation Of The Physical Parameters Of Ge-Se-In Glass System

Surbhi Sharma*, Amit Sarin**, Navjeet Sharma***
* Research Scholar, Punjab Technical University, Kapurthala, India
** Department of Physics, Amritsar College of Engineering & Technology, Amritsar, India
*** Department of Physics, DAV College, Jalandhar, India
Periodicity:April - June'2014
DOI : https://doi.org/10.26634/jms.2.1.2757

Abstract

In this paper an attempt has been made to theoretically find the variation of some important parameters of one of the arsenic fre Ge-Se glass system by the addition of In content. Various parameters like co-ordination number, floppy modes, bond energy, electro negativity, heat of atomization, cohesive energy and glass transition temperature have been calculated for Ge Se In (x=0,1,2,3,4,5,6) glass system. Glass transition temperature (Tg) is calculated by using 16 84-x x two approaches i.e. Tichy-Ticha and Lankhorst approaches. Tg seems to be increasing in theoretical calculations while average single bond energy is decreasing with the increase in the content of In.

Keywords

Chalcogenide, Cohesive Energy, Glass transition temperature, Lone pair electrons, Heat of Atomization.

How to Cite this Article?

Sharma, S., Sarin, A., & Sharma, N. (2014). Effect of Compositional Variation of the Physical Parameters of Ge-Se-In Glass System. i-manager's Journal on Material Science, 2(1), 1-6. https://doi.org/10.26634/jms.2.1.2757

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