References
[1]. D.B. Strukov, G.S. Snider, D.R. Stewart and R.S. Williams,. (2008). The missing memristor found, Nature, Vol. 453, pp. 80-83, 1.
[2]. L.O. Chua, (1971). Memristor - the missing circuit element, IEEE Trans. on Circuit Theory, Vol.CT-18, No. 5, pp. 507-519.
[3]. S. Shin, K. Kim, and S.M. Kang,. (2009). Memristor-based fine resolution resistance and its applications, ICCCAS.
[4]. Pershin, Yuriy, La Fontaine, Steven, and Di Ventra, Massimiliano,. (2008). Memristive model of amoeba's Learning, Available from Nature Proceedings.
[5]. M. Laiho, E. Lehtonen. (2010). Arithmetic Operation within Memristor-based Memory, 12th International Workshop on Cellular Nanoscale Networks and their Application (CNNA 2010), pp. 1-4, Berkeley, CA.
[6]. Yogesh N Joglekar, Stephen J.Wolf “The elusive memristor: properties of basic electrical circuits”.
[7]. Julien Borghetti, Gregory S. Snider et.al. “Memristive switches enable 'stateful' logic operations via material implication”.
[8]. J.J. Blackstock, W.F. Stickle, C. L. Donley, D. R. Steward, and R. S. Williams,. (2007). Infernal structure of a molecular junction device, Phys. Chem. Letters, Vol. 111, pp. 16-20.
[9]. W. Robinett, G.S. Snider, P.J. Kuekes, and R. S.Williams,. (2007). Computing with a trillion crummy components, Com. of the ACM, Vol. 50, pp. 35-39.
[10]. L.O. Chua,. (2003). Nonlinear circuit foundations for nano devices, Proc. of IEEE, Vol. 91, pp. 1830- 1859.
[11]. D.R. Stewart, D.A.A. Ohlberg, P.A. Beck, Y. Chen, R. S. Williams,. (2004). Molecule independent electrical switching in Pt/Organic monolayer/Ti devices, Nano-Letters, Vol. 4, pp. 133-136.
[12]. G. Snider,. (2007). Architecture and methods for Computing with reconfigurable resistor crossbar. US Patent 7,203,789.
[13]. R. H. Chen, A. N. Korotov, K. K. Likharev,. (1996). Single-electron transistor logic, Appl. Phys. Lett.68, pp.1954.
[14]. A. Islamshah, A. O. Or love, G. Toth, G. H. Bernstein, and G.S. Lent, and G.L. Snider. (1999). Digital Logic Gate Using Quantum-Dot Cellular Automata Science, Vol. 284, pp. 289 – 291.
[15]. C.P Collier, E.W. Wong, M. Belohradsky, F.M. Raymo,. (1999). Electronically Configurable Molecular- Based Logic Gates, Science, Vol. 285.16, pp. 391 –394.
[16]. A. DeHon,. (2003). Array-based architecture for FETbased Nanoscale electronics, IEEE Trans. Nanotechnology, Vol. 2, pp. 23-32.
[17]. Y. Myamoto, A. Rubio, S.G. Louie, and M. L. Cohen,. (1999). Self inductance of chiral conducting nanotubes, Phys. Rev. B, Vol. 60, pp 13885- 13889.
[18]. A.L. Hodgkin, and A.F. Hyxley,. (1952). A quantative description of membrane curent and its application to conduction in nerve, Journal on Phys. Vol. 117, pp. 500- 544.
[19]. N. Gergel-Hackett, B. Hamadani, B. Dunlap, J. Suehle, C. Richtet, C. Hacker, D. Gundlach,. (2009). A flexibe solution processed memristor, IEEE EDL, Vol. 30, No, 30, pp. 706-708.
[20] F. Argall, (1968). Switching phenomena in titanium oxide thin films, Solid State Electron, Vol. 11, No. 5, pp. 535-541, May .
