A Novel Current-Source-Based Active Gate Driver for High Power IGBT Modules with Enhanced Switching Controllability

Grace Imelda*
Rizal Technological University, Manila, Philippines.
Periodicity:October - December'2024
DOI : https://doi.org/10.26634/jps.12.3.21824

Abstract

High power insulated gate bipolar transistors (IGBTs) are integral to modern power conversion systems across railway traction, renewable energy, and HVDC transmission. Traditional gate drivers offer limited adaptability under dynamic conditions, leading to increased switching losses and reduced reliability. This paper proposes a novel current source based active gate driver (CS-AGD) tailored for high-power IGBT modules, enabling dynamic control of transient switching characteristics. We design and prototype a CS-AGD circuit, integrate it within a wide-range double-pulse test platform, and experimentally validate its performance under voltages up to 1000 V and currents up to 600 A. Results demonstrate significant reductions in switching losses and peak voltage/current overshoots compared to conventional gate driving strategies. The proposed solution offers enhanced controllability, opening new pathways for reliability- optimized and high-efficiency power electronic systems.

Keywords

Current-Source-Based Active Gate Driver (CS-AGD), High-Power IGBT Modules, Switching Performance Optimization, Switching Loss Reduction, Voltage Overshoot Suppression, Dynamic Gate Control, dv/dt and di/dt Regulation, Electromagnetic Interference (EMI) Control, Transient Controllability Index, Double Pulse Test (DPT) Analysis, Power Semiconductor Devices, Traction Systems and HVDC Converters, Wide-Bandgap Semiconductors (SiC, GaN), Smart Gate Driver Technology, Multi-Device Synchronization, Thermal and Lifetime Modeling, Industrial and Aerospace Power Electronics.

How to Cite this Article?

Imelda, G. (2024). A Novel Current-Source-Based Active Gate Driver for High Power IGBT Modules with Enhanced Switching Controllability. i-manager’s Journal on Power Systems Engineering, 12(3), 20-30. https://doi.org/10.26634/jps.12.3.21824

References

[5]. Jones, G. T. (2021). Digital Active Gate Drives to Increase Power Semiconductor Performance (Doctoral dissertation, University of Oxford).
[6]. Krein, P. T. (1997). Elements of Power Electronics. Oxford University Press.
[10]. Shrestha, B. R. (2016). Efficiency and Reliability Analyses of AC and 380v DC Data Centers. South Dakota State University.
[11]. Tan, K. (2021). Active Gate Driver and Switching Characterisation for High-Power IGBT Modules (Doctoral dissertation, University of Leicester).
[12]. Tolbert, L. M. (2005). Power Electronics for Distributed Energy Systems and Transmission and Distribution Applications: Assessing the Technical Needs for Utility Applications. Oak Ridge National Lab.
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