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A 3.1-5GHz Low Power, High Gain and Improved Linearity Low Noise Amplifier (LNA) for Implantable Ultra Wideband Applications in CMOS Silicon-On- Sapphire (SOS) Process

Ayobami Iji*, Xie Zhu**

*-** Michael Heimlich MacQuarie University, Sydney.

Periodicity:September - November'2012
DOI : https://doi.org/10.26634/jit.1.4.2016

Abstract

High data rate implantable wireless systems come with many challenges, chief among them being low power operation and high path loss. LNAs designed for this application must include high gain, low noise figure (NF) and better linearity at low power consumption within the required frequency. In this paper, our design is based on Impulse Response (IR) Ultra Wide-Band (UWB) operating at (3.1 — 5) GHz. We report the design and measurement of an LNA with 2.4dB NF, 17.3dB of gain and input intercept point of 2dBm consuming 4mW, which make it suitable for implantable radio applications. The process technology used here is 0.25µm CMOS Silicon on Sapphire (SOS) process.

Keywords

Low power, Linearity, CMOS

How to Cite this Article?

Iji, A., and Zhu, X. (2012). A 3.1-5GHz Low Power, High Gain And Improved Linearity Low Noise Amplifier (LNA) For Implantable Ultra Wideband Applications In CMOS Silicon-On- Sapphire (SOS) Process. i-manager’s Journal on Information Technology, 1(4), 45-47. https://doi.org/10.26634/jit.1.4.2016

References

[1]. M. Khurran, S.M. R. Hasan. (2012, March). ''A 3-5 GHz Current –Reuse gm-Boosted CG LNA for UWB in 130nm CMOS'' IEEE trans. on VLSI. Vol. 20, No. 3.

[2] S-G. Lee, et al. (2004, May). ''CMOS Low-Noise Amplifier Design Optimisation Techniques'', IEEE Transactions on Microwave Theory and Techniques, Vol.52, No. 5.

[3] C-T. Fu, H. Lakdawala, S. S. Taylor. (2011, February). ''A 2 2.5GHz 32nm 0.35mm 3.5dB NF -5dBm P1dB Fully Differential CMOS Push-Pull LNA with Integrated 34dBm T/R Switch and ESD Protection'' ISSCC Dig. Tech. Paper, pp. 56-57.

[4]. H-J Lee et al. (2006). ''A 3 to 5 GHz CMOS UWB LNA with Input Matching using Miller Effect,'' ISSCC Dig. Tech. Papers, pp. 202.

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