Design and Analysis of Voltage Difference Transconductance Amplifier (VDTA) at FINFET CMOS Technology

Kishore Nalla*, Krishna Motkuri**
*-** Department of Electronics and Communication Engineering, Geethanjali College of Engineering and Technology, Hyderabad, India.
Periodicity:July - December'2023


This paper proposes a FINFET (Fin Field Effect Transistor)-based Voltage Difference Transconductance Amplifier (VDTA). This paper aims to provide an amplifier that will enable VDTA to achieve its desired characteristics. The circuit proposed for FINFET-based VDTA operates with a bias current order of 150μA and a source voltage of 0.9V. The active element makes the amplitude electronically tuneable with bias current. The designed circuit was implemented in both GPDK 180nm technology and FINFET technology using the Cadence Virtuoso tool. Various factors, including technology node components and the operating voltage provided by FINFET VDTA structures, are compared. A Monte Carlo simulation is conducted for the suggested circuit, which dissipates 187.53μW of power. In comparison to the standard VDTA, it exhibits notably low power dissipation.


Amplifier, FINFET CMOS Technology, Fin Field Effect Transistor, Voltage Difference Transconductance Amplifier, VDTA.

How to Cite this Article?

Nalla, K., and Motkuri, K. (2023). Design and Analysis of Voltage Difference Transconductance Amplifier (VDTA) at FINFET CMOS Technology. i-manager’s Journal on Circuits and Systems, 11(2), 11-19.


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