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Analysis of Carbon Nanotube for Low Power Nano Electronics Applications

Pradeep Singh Yadav*, Chinmay Chandrakar**, Anil Kumar Sahu***

* Shri Shankaracharya Technical Campus, Bhilai, Chhattisgarh, India.

** Rungta College of Engineering and Technology, Bhilai, Chhattisgarh, India.

*** Bharat Institute of Engineering and Technology, Hyderabad, India.

Periodicity:January - March'2023
DOI : https://doi.org/10.26634/jele.13.2.19383

Abstract

The implementation of nanoelectronic circuits depends on technologies such as Complementary Metal-Oxide Semiconductor (CMOS) or Bipolar CMOS (BICMOS), and the length of the channel can be reduced up to a certain limit. Due to the generation of various errors nanomaterials can be an alternative solution for circuit design. In the field of nanotechnology, Carbon Nanotubes (CNTs) have become a notable and remarkable invention. Their structure is very similar to that of graphite, and its small size, lightweight, high strength, and good conductivity make them ideal building blocks for future technologies. CNTs hold great promise for being the catalyst for the next technological revolution. Today, a broad range of processes is available to produce various types of CNTs, depending on the rolling times of graphite sheets. This review paper sheds light on the different types of CNTs, their properties, methods of synthesis such as arc discharge and chemical vapor deposition, and their applications. To achieve this goal, this paper provides a review that aims to define the state-of-the-art in this field from a novel and unified perspective while elaborating insights of current developments and emerging trends.

Keywords

Carbon Nanotube Field Effect Transistor (CNTFET), Multi-Walled Carbon Nanotubes (MWCNT), Single-Walled Carbon Nanotubes (SWCNT), Double Walled Carbon Nanotubes (DWCNT), Ternary, CVD, Multi Valued Logic, Spice Circuit Simulation.

How to Cite this Article?

Yadav, P. S., Chandrakar, C., and Sahu, A. K. (2023). Analysis of Carbon Nanotube for Low Power Nano Electronics Applications. i-manager’s Journal on Electronics Engineering, 13(2), 46-63. https://doi.org/10.26634/jele.13.2.19383

References

[1]. Aïssa, B., & El Khakani, M. A. (2009). The channel length effect on the electrical performance of suspended-single-wall-carbon-nanotube-based field effect transistors. Nanotechnology, 20(17), 175203.

[2]. Alam, K., & Lake, R. (2005). Performance of 2 nm gate length carbon nanotube field-effect transistors with source∕ drain underlaps. Applied Physics Letters, 87(7), 073104.

[3]. Appenzeller, J., Knoch, J., Derycke, V., Martel, R., Wind, S., & Avouris, P. (2002). Field-modulated carrier transport in carbon nanotube transistors. Physical Review Letters, 89(12), 126801.

[4]. Appenzeller, J., Lin, Y. M., Knoch, J., & Avouris, P. (2004). Band-to-band tunneling in carbon nanotube field-effect transistors. Physical Review Letters, 93(19), 196805.

[5]. Appenzeller, J., Lin, Y. M., Knoch, J., Chen, Z., & Avouris, P. (2005). Comparing carbon nanotube transistors-the ideal choice: a novel tunneling device design. IEEE Transactions on Electron Devices, 52(12), 2568-2576.

[6]. Avci, U. E., Morris, D. H., & Young, I. A. (2015). Tunnel field-effect transistors: Prospects and challenges. IEEE Journal of the Electron Devices Society, 3(3), 88-95.

[7]. Bachtold, A., Hadley, P., Nakanishi, T., & Dekker, C. (2001). Logic circuits with carbon nanotube transistors. Science, 294(5545), 1317-1320.

[8]. Banerjee, P., & Sarkar, S. K. (2017). 3-D analytical modeling of high-k gate stack dual-material tri-gate strained silicon-on-nothing MOSFET with dual-material bottom gate for suppressing short channel effects. Journal of Computational Electronics, 16, 631-639.

[9]. Bockrath, M., Hone, J., Zettl, A., McEuen, P. L., Rinzler, A. G., & Smalley, R. E. (2000). Chemical doping of individual semiconducting carbon-nanotube ropes. Physical Review B, 61(16), R10606.

[10]. Burghard, M., Klauk, H., & Kern, K. (2009). Carbon based field effect transistors for nanoelectronics. Advanced Materials, 21(25-26), 2586-2600.

[11]. Chau, R., Datta, S., Doczy, M., Doyle, B., Jin, B., Kavalieros, J., ... & Radosavljevic, M. (2005). Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Transactions on Nanotechnology, 4(2), 153-158.

[12]. Chau, R., Doyle, B., Doczy, M., Datta, S., Hareland, S., Jin, B., ... & Metz, M. (2003, June). Silicon nanotransistors and breaking the 10 nm physical gate length barrier. In 61st Device Research Conference. Conference Digest (Cat. No. 03TH8663) (pp. 123-126). IEEE.

[13]. Che, Y., Chen, H., Gui, H., Liu, J., Liu, B., & Zhou, C. (2014). Review of carbon nanotube nanoelectronics and macroelectronics. Semiconductor Science and Technology, 29(7), 073001.

[14]. Chen, Z., Appenzeller, J., Solomon, P. M., Lin, Y. M., & Avouris, P. (2006, June). High performance carbon nanotube ring oscillator. In 2006 64th Device Research Conference (pp. 171-172). IEEE.

[15]. Chowdhury, N., Iannaccone, G., Fiori, G., Antoniadis, D. A., & Palacios, T. (2017). GaN nanowire n- MOSFET with 5 nm channel length for applications in digital electronics. IEEE Electron Device Letters, 38(7), 859-862.

[16]. Chu, C. H., Sarangadharan, I., Regmi, A., Chen, Y. W., Hsu, C. P., Chang, W. H., ... & Wang, Y. L. (2017). Beyond the Debye length in high ionic strength solution: Direct protein detection with field-effect transistors (FETs) in human serum. Scientific Reports, 7(1), 1-15.

[17]. Derycke, V., Martel, R., Appenzeller, J., & Avouris, P. (2001). Carbon nanotube inter-and intramolecular logic gates. Nano Letters, 1(9), 453-456.

[18]. Ding, L., Zhang, Z., Liang, S., Pei, T., Wang, S., Li, Y., ... & Peng, L. M. (2012). CMOS-based carbon nanotube pass-transistor logic integrated circuits. Nature Communications, 3(1), 677.

[19]. Dresselhaus, G., Dresselhaus, M. S., & Saito, R. (1998). Physical Properties of Carbon Nanotubes. World scientific.

[20]. Dresselhaus, M. S., Dresselhaus, G., & Jorio, A. (2004). Unusual properties and structure of carbon nanotubes. Annual Review of Materials Research, 34, 247-278.

[21]. Dürkop, T., Getty, S. A., Cobas, E., & Fuhrer, M. S. (2004). Extraordinary mobility in semiconducting carbon nanotubes. Nano Letters, 4(1), 35-39.

[22]. El-Naggar, A., Mansour, A., Wanass, A., & Hassan, S. (2016, April). Comparative review of carbon nanotube FETs. In 2016 Third International Conference on Electrical, Electronics, Computer Engineering and Their Applications (EECEA) (pp. 57-62). IEEE.

[23]. Franklin, A. D., Luisier, M., Han, S. J., Tulevski, G., Breslin, C. M., Gignac, L., ... & Haensch, W. (2012). Sub-10 nm carbon nanotube transistor. Nano Letters, 12(2), 758-762.

[24]. Guo, J., Datta, S., Lundstrom, M., Brink, M., McEuen, P., Javey, A., ... & McIntyre, P. (2002, December). Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors. In Digest. International Electron Devices Meeting, (pp. 711-714). IEEE.

[25]. Hou, Y. T., Li, M. F., Low, T., & Kwong, D. L. (2004). Metal gate work function engineering on gate leakage of MOSFETs. IEEE Transactions on Electron Devices, 51(11), 1783-1789.

[26]. Huang, S., Maynor, B., Cai, X., & Liu, J. (2003). Ultralong, well aligned single walled carbon nanotube architectureson surfaces. Advanced Materials, 15(19), 1651-1655.

[27]. Ijeomah, G., Obite, F., & Rahman, O. (2016). Development of carbon nanotube-based biosensors. International Journal of Nano and Biomaterials, 6(2), 83-109.

[28]. Javey, A., Guo, J., Paulsson, M., Wang, Q., Mann, D., Lundstrom, M., & Dai, H. (2004). High-field quasiballistic transport in short carbon nanotubes. Physical Review Letters, 92(10), 106804.

[29]. Javey, A., Guo, J., Wang, Q., Lundstrom, M., & Dai, H. (2003). Ballistic carbon nanotube field-effect transistors. Nature, 424(6949), 654-657.

[30]. Javey, A., Kim, H., Brink, M., Wang, Q., Ural, A., Guo, J., ... & Dai, H. (2002). High-κ dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Materials, 1(4), 241-246.

[31]. Kalbacova, M., Kalbac, M., Dunsch, L., Kataura, H., & Hempel, U. (2006). The study of the interaction of human mesenchymal stem cells and monocytes/macrophages with single walled carbon nanotube films. Physica Status Solidi (B), 243(13), 3514-3518.

[32]. Kong, J., Soh, H. T., Cassell, A. M., Quate, C. F., & Dai, H. (1998). Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers. Nature, 395(6705), 878-881.

[33]. Koswatta, S. O., Valdes-Garcia, A., Steiner, M. B., Lin, Y. M., & Avouris, P. (2011). Ultimate RF performance potential of carbon electronics. IEEE Transactions on Microwave Theory and Techniques, 59(10), 2739-2750.

[34]. Léonard, F. (2008). Physics of Carbon Nanotube Devices. William Andrew.

[35]. Lin, Y., Taylor, S., Li, H., Fernando, K. S., Qu, L., Wang, W., ... & Sun, Y. P. (2004). Advances toward bioapplications of carbon nanotubes. Journal of Materials Chemistry, 14(4), 527-541.

[36]. Liu, J., & Hersam, M. C. (2010). Recent developments in carbon nanotube sorting and selective growth. MRS Bulletin, 35(4), 315-321.

[37]. Lundstrom, M. (2003). Moore's law forever? Science, 299(5604), 210-211.

[38]. Luo, J., Wei, L., Lee, C. S., Franklin, A. D., Guan, X., Pop, E., ... & Wong, H. S. P. (2013). Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length. IEEE Transactions on Electron Devices, 60(6), 1834-1843.

[39]. Macilwain, C. (2005). Computer hardware: silicon down to the wire. Nature, 436, 22-23.

[40]. Marani, R., & Perri, A. G. (2015). The next generation of FETs: CNTFETs. International Journal of Advances in Engineering & Technology, 8(5).

[41]. Martel, R., Derycke, V., Appenzeller, J., Wind, S., & Avouris, P. (2002, June). Carbon nanotube field-effect transistors and logic circuits. In Proceedings of the 39th Annual Design Automation Conference (pp. 94-98).

[42]. Martel, R., Schmidt, T., Shea, H. R., Hertel, T., & Avouris, P. (1998). Single-and multi-wall carbon nanotube field-effect transistors. Applied Physics Letters, 73(17), 2447-2449.

[43]. McEuen, P. L., Fuhrer, M. S., & Park, H. (2002). Singlewalled carbon nanotube electronics. IEEE Transactions on Nanotechnology, 1(1), 78-85.

[44]. Mehrad, M., & Ghadi, E. S. (2017, April). C-shape silicon window nano MOSFET for reducing the short channel effects. In 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 164-167). IEEE.

[45]. Mori, T., Iizuka, S., & Nakayama, T. (2017). Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology. MRS Communications, 7(3), 541-550.

[46]. Odom, T. W., Huang, J. L., Kim, P., & Lieber, C. M. (1998). Atomic structure and electronic properties of single-walled carbon nanotubes. Nature, 391(6662), 62-64.

[47]. Ossaimee, M., Gamal, S., & Shaker, A. (2015). Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs. Electronics Letters, 51(6), 503-504.

[48]. Peercy, P. S. (2000). The drive to miniaturization. Nature, 406(6799), 1023-1026.

[49]. Peng, H. B., Hughes, M. E., & Golovchenko, J. A. (2006). Room-temperature single charge sensitivity in carbon nanotube field-effect transistors. Applied Physics Letters, 89(24), 243502.

[50]. Peng, L. M., Zhang, Z., & Wang, S. (2014). Carbon nanotube electronics: Recent advances. Materials Today, 17(9), 433-442.

[51]. Pennington, G., Akturk, A., & Goldsman, N. (2003, December). Electron mobility of a semiconducting carbon nanotube. In International Semiconductor Device Research Symposium, 2003 (pp. 412-413). IEEE.

[52]. Popov, V. N. (2004). Carbon nanotubes: properties and application. Materials Science and Engineering: R: Reports, 43(3), 61-102.

[53]. Radosavljevic, M., Chu-Kung, B., Corcoran, S., Dewey, G., Hudait, M. K., Fastenau, J. M., ... & Chau, R. (2009, December). Advanced high-K gate dielectric for high-performance short-channel In 0.7 Ga 0.3 as quantum well field effect transistors on silicon substrate for low power logic applications. In 2009 IEEE International Electron Devices Meeting (IEDM) (pp. 1-4). IEEE.

[54]. Ren, Z. (2003a). Inversion channel mobility in high-k high performance MOSFETs. In IEEE International Electron Meeting, 2003.

[55]. Ren, Z. (2003b). A., Guo, J., Farmer, D. B., Wang, Q., Yenilmez, E., Gordon, R. G., ... & Dai, H. (2004). Selfaligned ballistic molecular transistors and electrically parallel nanotube arrays. Nano Letters, 4(7), 1319-1322.

[56]. Roy, D., & Biswas, A. (2018). Analytical model of nanoscale junctionless transistors towards controlling of short channel effects through source/drain underlap and channel thickness engineering. Superlattices and Microstructures, 113, 71-81.

[57]. Schroter, M., Claus, M., Sakalas, P., Haferlach, M., & Wang, D. (2013). Carbon nanotube FET technology for radio-frequency electronics: State-of-the-art overview. IEEE Journal of the Electron Devices Society, 1(1), 9-20.

[58]. Service, R. F. (2009). Is silicon's reign nearing its end? Science, 323(5917), 1000-1002.

[59]. Singh, A., Khosla, M., & Raj, B. (2015, October). Comparative analysis of carbon nanotube field effect transistors. In 2015 IEEE 4th Global Conference on Consumer Electronics (GCCE) (pp. 552-555). IEEE.

[60]. Smalley, R. E. (1998). Crystalline ropes of metallic carbon nanotubes. In Supercarbon: Synthesis, Properties and Applications (pp. 31-40). Springer Berlin Heidelberg.

[61]. Stephan, O., Ajayan, P. M., Colliex, C., Redlich, P., Lambert, J. M., Bernier, P., & Lefin, P. (1994). Doping graphitic and carbon nanotube structures with boron and nitrogen. Science, 266(5191), 1683-1685.

[62]. Streetman, B. G., & Banerjee, S. (2000). Solid State Electronic Devices (Vol. 4). Prentice hall, New Jersey.

[63]. Sun, D. M., Timmermans, M. Y., Tian, Y., Nasibulin, A. G., Kauppinen, E. I., Kishimoto, S., ... & Ohno, Y. (2011). Flexible high-performance carbon nanotube integrated circuits. Nature Nanotechnology, 6(3), 156-161.

[64]. Svensson, J. (2010). Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices (Doctoral thesis, University of Gothenburg).

[65]. Tans, S. J., Verschueren, A. R., & Dekker, C. (1998). Room-temperature transistor based on a single carbon nanotube. Nature, 393(6680), 49-52.

[66]. Terrones, M. (2003). Science and technology of the twenty-first centur y: synthesis, properties, and applications of carbon nanotubes. Annual Review of Materials Research, 33(1), 419-501.

[67]. Tulevski, G. S., Franklin, A. D., Frank, D., Lobez, J. M., Cao, Q., Park, H., ... & Haensch, W. (2014). Toward highperformance digital logic technology with carbon nanotubes. ACS Nano, 8(9), 8730-8745.

[68]. Usmani, F. A., & Hasan, M. (2010). Carbon nanotube field effect transistors for high performance analog applications: An optimum design approach. Microelectronics Journal, 41(7), 395-402.

[69]. Wind, S. J., Appenzeller, J., Martel, R., Derycke, V., & Avouris, P. (2002). Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes. Applied Physics Letters, 80(20), 3817-3819.

[70]. Wong, H. S. P. (2005). Beyond the conventional transistor. Solid-State Electronics, 49(5), 755-762.

[71]. Yang, M. H., Teo, K. B., Gangloff, L., Milne, W. I., Hasko, D. G., Robert, Y., & Legagneux, P. (2006). Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88(11), 113507.

[72]. Yang, N., Chen, X., Ren, T., Zhang, P., & Yang, D. (2015). Carbon nanotube based biosensors. Sensors and Actuators B: Chemical, 207, 690-715.

[73]. Zhang, J., Lin, A., Patil, N., Wei, H., Wei, L., Wong, H. S. P., & Mitra, S. (2012). Carbon nanotube robust digital VLSI. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 31(4), 453-471.

[74]. Zhang, Z. Y., Wang, S., Ding, L., Liang, X. L., Xu, H. L., Shen, J., ... & Peng, L. M. (2008). High-performance ntype carbon nanotube field-effect transistors with estimated sub-10-ps gate delay. Applied Physics Letters, 92(13), 133117.

[75]. Zhang, Z., Liang, X., Wang, S., Yao, K., Hu, Y., Zhu, Y., ... & Peng, L. M. (2007). Doping-free fabrication of carbon nanotube based ballistic CMOS devices and circuits. Nano Letters, 7(12), 3603-3607.

[76]. Zhang, Z., Wang, S., Ding, L., Liang, X., Pei, T., Shen, J., ... & Peng, L. M. (2008). Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage. Nano Letters, 8(11), 3696-3701.

[77]. Zhang, Z., Wang, S., Wang, Z., Ding, L., Pei, T., Hu, Z., ... & Peng, L. M. (2009). Almost perfectly symmetric SWCNT-based CMOS devices and scaling. ACS Nano, 3(11), 3781-3787.

[78]. Zhou, C., Kong, J., Yenilmez, E., & Dai, H. (2000). Modulated chemical doping of individual carbon nanotubes. Science, 290(5496), 1552-1555.

Analysis of Carbon Nanotube for Low Power Nano Electronics Applications

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