Design and Development of High Power EDFA in C-Band

Koushik Basak*, R. K. Bahl **
*-** Optical Communication Division, Space Applications Centre, Indian Space Research Organization, Gujarat, India.
Periodicity:June - August'2020
DOI : https://doi.org/10.26634/jele.10.4.17952

Abstract

In this paper, we have discussed the design of high power optical amplifier incorporating physical parameters like doping diameter, doping density and comparison of simulated result with measured one. The seed input to amplifier is considered less than -10 dBm and targeted amplified output is better than 34 dBm. For the development of high power optical amplifier, first stage is designed to provide high gain, low noise figure (NF) and stable output power. Highly Erbium (Er) doped fiber is used for this study. Simulated results closely validate the measured result while Excited State Absorption (ESA) and ion interactions are taken into account. Based on this development, further stages of high power Erbium-Doped Fiber Amplifier (EDFA) is being developed.

Keywords

EDFA, Excited State Absorption, Pair Induced Quenching (PIQ), Noise Figure, Ion-Ion Interaction.

How to Cite this Article?

Basak, K., and Bahl, R. K. (2020). Design and Development of High Power EDFA in C-Band. i-manager's Journal on Electronics Engineering, 10(4), 1-8. https://doi.org/10.26634/jele.10.4.17952

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