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Parametric Influence on Noise in High Electron Mobility Transistor LNA

V. J. K. Kishor*, Kannan .V**

* Research Scholar, Sathyabama University, Chennai, India.

** Principal, Jeppiaar Institute of Technology, Sri Perumpdur, India.

Periodicity:March - May'2012
DOI : https://doi.org/10.26634/jele.2.3.1768

Abstract

In this paper, parametric influence on noise in HEMT LNA designed using FR4 substrate was analyzed. At higher frequencies of operation high electron mobility transistor designs are often influenced by shot noise and this shot noise is depended on different parameters of the device. This design is carried out at a centre frequency of 5.8GHz and critical parameters like gate resistance, transconductance; gate source biasing values influence on noise immunity of this design is analyzed in the frequency range of 1GHz to 10GHz. Variation of Maximum Gain and Noise Figure w.r.t to frequency were obtained for different parametric values. Obtained results had given better understanding of the noise influence on the design performance under different constraints pertained to parameter variation. These observations are in greater agreement with the theoretical facts. This work is carried out using ADS simulation software.

Keywords

Shot Noise, Gate Resistance, Gain, Noise Figure, HEMT.

How to Cite this Article?

V.J.K. Kishor Sonti and V. Kannan (2012). Parametric Influence On Noise In High Electron Mobility Transistor LNA. i-manager’s Journal on Electronics Engineering, 2(3), 37-42. https://doi.org/10.26634/jele.2.3.1768

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Parametric Influence on Noise in High Electron Mobility Transistor LNA

Abstract

Keywords

How to Cite this Article?

References

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