Investigations of Current Mechanisms and Electronic Properties of Schottky Barrier Diode

Wagah F. Mohamad*, **
* Communications & Electronics, Department of Faculty Engineering, Philadelphia University, Amman, Jordan.
Periodicity:March - May'2012


The energy band diagram and space charge regions of Schottky barrier (SB) solar cells are different from normal pn solar cells.  Many facts and theories must be studied and developed to assist understanding and implementing SB solar cells.  Few samples of SB devices were prepared by thermal deposition under vacuum then tested and studied carefully.  An interfacial layer was introduced between metal and semiconductor.  I-V and C—V are measured, drawn and discussed in details.  The current transportation mechanism of the prepared samples is found to be of thermal mechanism type.  The current transportation depends on the potential barrier height.  From C— V characteristics, it is found that the potential barrier height is decreased as the interfacial oxide becomes thicker.


MOS circuits, MOS photo diode, Schottky barrier diode.

How to Cite this Article?

Wagah F. Mohammad and Nada Nabil Khatib (2012). Investigations Of Current Mechanisms And Electronic Properties Of Schottky Barrier Diode. i-manager’s Journal on Electronics Engineering, 2(3), 30-36.


[1]. M. P. Lepslter and S. M. Zse, (1968). "Silicon Schottky Barrier Diode with Near – Ideal I-V Characteristic", Bell. System. Tech. J., Vol. 47, 195.
[2]. M. J. Turner and E. H. Rhoderick, (1968). “Metal-Silicon Schottky Barriers", Solid-State Electronics, Vol. 11, 291.
[3]. J. I. Lee, J. Brini and C. A. Dimitriadis, (1998). " Simple Parameter Extraction Methods for Non-Ideal Schottky Barrier Diodes", Electronics Letters, Vol. 34 (12), 268.
[4]. D. R. Lillington and W. G. Townsend, (1976). "Effect of Interfacial Oxide layers on the performance of Silicon Schottky Barrier Diodes Solar Cell”, Appl. Phys. Let., Vol. 26 (2), 97.
[5]. A. Ghosh, C. Fishman, and T. Feng, (1978). "SnO2/Si Solar Cell Heterostructure or Schottky- Barrier or MIS-Type Device", J. Appl. Phys., Vol. 49 (6), 3490.
[6] N. Li, K. Lee, C. K. Renshaw, X. Xiao and S. R. Forrest, (2011). "Improved power conversion efficiency of InP solar cells using organic window layers", Appl. Phys. Lett. Vol. 98, doi:10.1063/1.3549692.
[7]. S. Rajaputra, G. Sagi and V. P. Singh, (2009). "Schottky diode solar cells on electro deposited copper Phthalocyanine films", Solar Energy Materials and Solar Cells, Vol. 93, No.10, pp.60-64.
[8]. S. V. Averin, (1996). “Fast-Response Photo-detectors with a Large Active Area, Based on Schottky-Barrier Semiconductor Structure", Kvantovaya Electronika, Vol. 23(3), 284.
[9]. W. F. Mohamad, A. AbuHajar and A. N. Saleh, (2006). ” Effect of Oxide Layers and Metals on Photoelectric and Optical Properties of Schottky Barrier Photodetector “, Renewable Energy Journal, Vol.31 (10),P--, July.
[10] S. M. Shaban, N. M. Saeed and R. M. S. AL-Haddad, (2011). "Fabrication and study zinc sulfide schottky barrier detectors", Indian Journal of Science and Technology , Vol. 4, No. 4, pp.384-386.
[11]. Y. G. Goldberg, (1999). "Topical Review: Semiconductor Near-Ultraviolet Photo-electronics", Semiconductor Science and Technology, Vol. 14, R41.
[12]. W. Monch, (1996). "Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Interface", J. Vac. Techno. B, Vol. 14(4), 2985.
[13] H. A. guas, E. Fortunato and, R. Martins, (2002). "Role of the I layer surface properties on the performance of a- Si:H Schottky barrier photodiodes", Sensors and Actuators Vol. A 99, pp. 220–223.
[14] . E. H. Rhoderick, (1978). “Metal-Semiconductor Contact", Oxford University Press.
[15]. H. C. Card, E. H. Rhoderick, (1971). " Studies of Tunnel MOS Diodes: Part- I-Interface Effects in Silicon Schottky Diodes", J. Phys. D: Appl. Phys., Vol. 4, 1539.
[16]. M. A. Lampert and P. Mark, (1970). “Current Injection in Solids", Academic Press, New York and London.
[17]. D. Dascalu, (1977). "Electronic Processes in Unipolar Solid-state Device", Abacus Press.
[18]. S. M. Sze, (1969). “Physics of Semiconductor devices", John Wiley and Sons.
[19]. O. Güllü, S. Aydogan and A. Türüt, (2012). "High barrier Schottky diode with organic interlayer", Solid State Communications, Vol.152, pp. 381–385.
If you have access to this article please login to view the article or kindly login to purchase the article

Purchase Instant Access

Single Article

North Americas,UK,
Middle East,Europe
India Rest of world
Pdf 35 35 200 20
Online 35 35 200 15
Pdf & Online 35 35 400 25

Options for accessing this content:
  • If you would like institutional access to this content, please recommend the title to your librarian.
    Library Recommendation Form
  • If you already have i-manager's user account: Login above and proceed to purchase the article.
  • New Users: Please register, then proceed to purchase the article.