Method for Precise Timing and Duty Cycle Adjustment in I/O Pads

Andrey Malkov*
NXP Semiconductors, Moscow, Russia.
Periodicity:January - June'2020
DOI : https://doi.org/10.26634/jcir.8.1.17598

Abstract

Most modern digital circuits use synchronous design techniques. With the increase in operation frequency, the requirement for the delay stability is very strict. But even when design is completed, circuit parameters such as capacitance, resistance, as well as transistor's behaviour can only be modelled with limited accuracy, and these characteristics can vary with PVT (Process, Voltage, Temperature). The complexity and interactions among these factors make exact timing design of digital circuit an increasingly difficult task, and even with proper design, some percentage of manufactured circuits will fail to meet timing specification. We propose a method for fine-tuning circuit timing and duty cycle adjustment after fabrication. It allows correcting post-fabrication timing errors.

Keywords

PVT Compensation, PVT Control Circuit, Process Variation, Timing, Duty Cycle, Rise/Fall Delay Skew

How to Cite this Article?

Malkov, A. (2020). Method for Precise Timing and Duty Cycle Adjustment in I/O Pads. i-manager's Journal on Circuits and Systems, 8(1), 1-5. https://doi.org/10.26634/jcir.8.1.17598

References

[1]. Chi, H., Stout, D., & Chickanosky, J. (1997, September). Process, voltage and temperature compensation of offchip- driver circuits for sub-0.25-/spl mu/m CMOS technology. In Proceedings of Tenth Annual IEEE International ASIC Conference and Exhibit (Cat. No. 97TH8334) (pp. 279-282). IEEE. https://doi.org/10.1109/ ASIC.1997.617021
[2]. Choi, S. W., & Park, H. J. (2004, August). A PVTinsensitive CMOS output driver with constant slew rate. In Proceedings of 2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits (pp. 116-119). IEEE. https://doi.org/10.1109/APASIC.2004.1349423
[3]. Khan, Q. A., Siddhartha, G. K., Tripathi, D., Wadhwa, S. K., & Misri, K. (2006, January). Techniques for on-chip process voltage and temperature detection and compensation. In 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06) (pp. 6) IEEE. https:// doi.org/10.1109/VLSID.2006.155
[4]. Lim, C. H., Wong, K. L., & Kim, S. (2007). Patent Number: US 7197659 B2. Washington, DC: U.S. Patent and Trademark Office.
[5]. Malkov, A., Vasiounin, D., & Semenov, O. (2011). A Review of PVT Compensation Circuits for Advanced CMOS Technologies. Circuits and System, 2(3), 162-169.
[6]. Mullarkey, P. J. (2002). Patent Number: US 6499111 B2. Washington, DC: U.S. Patent and Trademark Office.
[7]. Tsugita, Y., Ueno, K., Asai, T., Amemiya, Y., & Hirose, T. (2009, May). On-chip PVT compensation techniques for low-voltage CMOS digital LSIs. In 2009 IEEE International Symposium on Circuits and Systems (pp. 1565-1568). IEEE. https://doi.org/10.1109/ISCAS.2009.5118068
If you have access to this article please login to view the article or kindly login to purchase the article

Purchase Instant Access

Single Article

North Americas,UK,
Middle East,Europe
India Rest of world
USD EUR INR USD-ROW
Pdf 35 35 200 20
Online 35 35 200 15
Pdf & Online 35 35 400 25

Options for accessing this content:
  • If you would like institutional access to this content, please recommend the title to your librarian.
    Library Recommendation Form
  • If you already have i-manager's user account: Login above and proceed to purchase the article.
  • New Users: Please register, then proceed to purchase the article.