2 were synthesized using soft chemical ion exchange route at room temperature over the Indium Tin Oxide (ITO) glass substrate for photovoltaic applications; these as-deposited thin films were characterized for structural, morphological, optical, and electrical properties. The structural characteristics observed using X-ray diffraction pattern (XRD) represent (112), (212), (105), and (205) planes corresponding to chalcopyrite phase of tetragonal CuInGaSe2 material. Peak at 21.40o in XRD confirms CdS composition, while average crystallite size is calculated to be 27nm. The XRD observations supported by Raman spectrum represent two shifts at ~113 cm-1, and 298 cm-1, respectively corresponding to A1and B2 modes of chalcopyrite CuInGaSe2 materials. Morphological studies using Scanning Electron Microscopy (SEM) exhibits plate like petal distribution with smaller size particles attached over the substrate surface. The energy band gap calculated using extrapolating the absorbance spectra is found to be ~1.47eV. This may correspond to defect state and stiochiometry induced charge transfer. The Hall Effect measurement revealed carrier charge concentration of 3x1023cm-3, charge mobility of 7.2 cm2/Vs. I-V studies show ~1.12% conversion efficiency under light illumination condition of 100 mW/cm2.

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Soft Chemical Route Synthesized CdS/CuInGaSe2 Thin Films for Photovoltaic Application

Rajesh A. Joshi*, Nikhielesh S. Bajaj**, Mukul Gupta***, Ekram Habeeb Hassan****
*-** Department of Physics, Toshniwal Arts, Commerce and Science College, Sengaon, Maharashtra, India.
***-**** UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, Madhya Pradesh, India.
Periodicity:July - September'2019
DOI : https://doi.org/10.26634/jms.7.2.15649

Abstract

Chalcopyrite heterojunction thin films of CdS/CuInGaSe2 were synthesized using soft chemical ion exchange route at room temperature over the Indium Tin Oxide (ITO) glass substrate for photovoltaic applications; these as-deposited thin films were characterized for structural, morphological, optical, and electrical properties. The structural characteristics observed using X-ray diffraction pattern (XRD) represent (112), (212), (105), and (205) planes corresponding to chalcopyrite phase of tetragonal CuInGaSe2 material. Peak at 21.40o in XRD confirms CdS composition, while average crystallite size is calculated to be 27nm. The XRD observations supported by Raman spectrum represent two shifts at ~113 cm-1, and 298 cm-1, respectively corresponding to A1and B2 modes of chalcopyrite CuInGaSe2 materials. Morphological studies using Scanning Electron Microscopy (SEM) exhibits plate like petal distribution with smaller size particles attached over the substrate surface. The energy band gap calculated using extrapolating the absorbance spectra is found to be ~1.47eV. This may correspond to defect state and stiochiometry induced charge transfer. The Hall Effect measurement revealed carrier charge concentration of 3x1023cm-3, charge mobility of 7.2 cm2/Vs. I-V studies show ~1.12% conversion efficiency under light illumination condition of 100 mW/cm2.

Keywords

 Thin Films, Heterojunction, Chemical Ion Exchange Route, Photovoltaic Applications.

How to Cite this Article?

 Joshi, R. A., Bajaj, N. S., Gupta, M., and Phase, D. M. (2019). Soft Chemical Route Synthesized CdS/CuInGaSe2 Thin Films for Photovoltaic Application. i-manager’s Journal on Material Science, 7(1), 35-41. https://doi.org/10.26634/jms.7.2.15649

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