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Review on The Impact of Deposition Conditions on Reactively Deposited CZTSe Thin Films

Rekha Prajapat*, Y. C. Sharma**

* Research Scholar, Department of Physics, Vivekananda Global University, Jaipur, Rajasthan, India.

**Dean, Research & Development and Professor of Physics, Vivekananda Global University, Jaipur, Rajasthan, India.

Periodicity:October - December'2018
DOI : https://doi.org/10.26634/jms.6.3.14831

Abstract

In the second generation thin film solar cell, Copper Zinc Tin Selenium (CZTSe) thin film is considered as the quintessential absorber layer in solar cell as its constituents are earth abundant and non-toxic, making it environmental friendly. Many fabrication methods have been employed to fabricate the films like Thermal evaporation method, pulsed layer deposition, RF-DC Sputtering, etc. The authors have monitored the aspects that highly influence the band gap of CZTSe thin films during the deposition process. This paper recapitulate the parameters that affect the band gap of CZTSe thin film as an absorber layer like substrate temperature, annealing temperature, and order of precursors.

Keywords

Substrate Temperature, Annealing Temperature and Ratio of Precursor.

How to Cite this Article?

Prajapat, R., and Sharma, Y. C. (2018). Review on the Impact of Deposition Conditions on Reactively Deposited CZTSe Thin Films. i-manager’s Journal on Material Science, 6(3), 50-55. https://doi.org/10.26634/jms.6.3.14831

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