xSe1-x crystals have been investigated by X-ray peak broadening. The Williamson Hall (W-H) analysis and size strain plot methods are used to study the individual contributions of crystallite sizes and lattice strain on the peak broadening of the InxSe1-x crystals. The physical parameters such as strain, stress, and energy density values were evaluated more specifically for all the reflection peaks of XRD corresponding to the hexagonal phase of InxSe1-x crystals from the modified form of the W-H plot using uniform deformation model (UDM), uniform stress deformation model (USDM), uniform deformation energy density model (UDEDM) and by the size strain plot method (SSP). The results obtained showed that the mean crystallite size of the InxSe1-x crystals determined from the W-H analysis and the SSP methods are inter-correlated.

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X-Ray Analysis of Inxse1-X Crystals by Scherrer, Williamson-Hall and Size-Strain Plot Methods

P. B. Patel*, H. N. Desai**, Denis***, B. P. Modi****
* Assistant Professor and Head, Department of Physics, J.N.M. Patel Science College, Surat, Gujarat, India.
** Research Scholar, Department of Physics, Veer Narmad South Gujarat University, Surat, Gujarat, India.
*** Associate Professor, Veer Narmad South Gujarat University, Surat, Gujarat, India.
**** Professor, Department of Physics, Veer Narmad South Gujarat University Surat, Gujarat, India.
Periodicity:October - December'2018
DOI : https://doi.org/10.26634/jms.6.3.14725

Abstract

InxSe1-x (x=0.2 and x=0.6) crystals have been grown by Bridgman/Stockbarger method. The compositional, morphological and structural properties of InxSe1-x semiconductor crystals have been investigated using energy dispersive X-ray (EDX), scanning electron microscopy (SEM) and X-ray diffractometer (XRD) techniques. The freshly cleaved crystals acquired from ingot have mirror-like surface. The powder XRD results revealed that the grown sample was crystalline with a hexagonal structure. SEM image showed that InxSe1-x crystals have smooth, homogenous and layered surface. The crystalline developments in the InxSe1-x crystals have been investigated by X-ray peak broadening. The Williamson Hall (W-H) analysis and size strain plot methods are used to study the individual contributions of crystallite sizes and lattice strain on the peak broadening of the InxSe1-x crystals. The physical parameters such as strain, stress, and energy density values were evaluated more specifically for all the reflection peaks of XRD corresponding to the hexagonal phase of InxSe1-x crystals from the modified form of the W-H plot using uniform deformation model (UDM), uniform stress deformation model (USDM), uniform deformation energy density model (UDEDM) and by the size strain plot method (SSP). The results obtained showed that the mean crystallite size of the InxSe1-x crystals determined from the W-H analysis and the SSP methods are inter-correlated.

Keywords

 Bridgman/Stockbarger Method, Semiconductor Crystals, X-ray Diffractometer Technique, The Williamson Hall (W-H) Analysis, Size Strain Plot Method.

How to Cite this Article?

 Patel, P.B., Desai, H. N., Dhimmer, J. M., and Modi, B. P. (2018). X-Ray Analysis of Inxse1-X Crystals by Scherrer, Williamson-Hall and Size-Strain. i-manager’s Journal on Material Science, 6(3), 34-42. https://doi.org/10.26634/jms.6.3.14725

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