Highly Optimized Content Addressable Memory by Using Match Line Sensing Method

D. Pradeep*, B. Ananda Venkatesan**
* M.Tech Student, Department of ECE, SRM University, Kattankulathur, Chennai, India.
** Assistant Professor, Department of ECE, SRM University, Kattankulathur, Chennai, India.
Periodicity:August - October'2013
DOI : https://doi.org/10.26634/jes.2.3.2583

Abstract

The design of high speed Content addressable memory (CAM) offers high speed search function in a single clock cycle. Content addressable memory is a memory that implements the lookup-table function in a single clock cycle using dedicated comparison circuitry. In the CAM design techniques at the circuit level and at the architectural level. At the circuit level, low-power match-line sensing techniques and search line driving approaches are utilized. In the existing system, introduce a parity bit that leads to sensing delay reduction at a cost of less than area and power overhead. Thus robust, high-speed and low-power match line sense amplifiers are highly sought after in CAM designs. In the proposed system, introduce a double parity bit for searching data, speed and power is increased. Without sacrificing speed, power is reduced by using gated clock technique.

Keywords

Content addressable memory (CAM), power gating.

How to Cite this Article?

Pradeep.D., and Venkatesan.B. (2013). Highly Optimized Content Addressable Memory by Using Match Line Sensing Method. i-manager’s Journal on Embedded Systems, 2(3), 24-29. https://doi.org/10.26634/jes.2.3.2583

References

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