Sensitivity Analysis By Active Layer And Dielectric Scaling Of An Organic Thin Field Effect Transistor Based Sensor

Harshita Pathak*, Himanshu Shukla**
* PG Scholar, Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, Uttar Pradesh,India.
** PG Scholar, Department of Electrical Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, Uttar Pradesh, India.
Periodicity:March - May'2018
DOI : https://doi.org/10.26634/jele.8.3.14388

Abstract

A low cost highly sensitive organic thin film transistor based organic gas sensor has been investigated with pentacene as an active and sensing layer. The variation in work function of source is lured due to gas adsorption, minimised carrier mobility, and soaring source and also drain resistance has paved way for a change in minimum and maximum drain current. On varying the width of active layer along with dielectric, significant variation was observed in turn on current, and minimum and maximum drain current over a constant threshold voltage on different source to drain width architecture. Consequently, sensitivity was formulated along with average sensitivity. The organic thin film transistor planted devices have emerged to be superior class of sensors.

Keywords

Sensor, Organic Thin Film Transistor, Sensitivity, Varying Active Layer, Varying Dielectric.

How to Cite this Article?

Pathak. H and Shukla. H (2018). Sensitivity Analysis by Active Layer and Dielectric Scaling of an Organic Thin Field Effect Transistor based Sensor. i-manager's Journal on Electronics Engineering, 8(3), 18-25. https://doi.org/10.26634/jele.8.3.14388

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