A Comparative Study of Hetero Structure Devices for Electronic Applications

Roberto Marani*, Anna Gina Perri**
* Researcher, Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy.
** Professor of Electronics and Head of Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, Bari, Italy.
Periodicity:June - August'2018

Abstract

In this paper, the authors present a comparison through a simulation study, among different hetero structure devices, like Metal Semiconductor Field Effect Transistor (MESFET), High Electron Mobility Transistor (HEMT), and Tunnel Field Effect Transistor (TFET), with reference to their applications in electronic field. In particular, MESFET and HEMT present good performance in power amplifiers and they are characterized by high mobility of the charge carriers that allows to consume less at high frequency. TFET is the newest experimental device, which has a very powerful application in logic circuits, ultra low-power specific analog ICs with better temperature strength and low-power SRAM.

Keywords

Heterostructure Devices, Modelling, Analogue and Digital Circuits, MOSFET, CAD.

How to Cite this Article?

Marani. R and Anna Gina Perri. (2018). A Comparative Study of Hetero Structure Devices for Electronic Applications. i-manager's Journal on Electronics Engineering, 8(4), 1-11.

References

[1]. Curtice, W. R. (1980). A MESFET model for use in the design of GaAs integrated circuits. IEEE Transactions on Microwave Theory and Techniques, 28(5), 448-456.
[2]. Juergensen, H. (2001). MOCVD technology in research, development and mass production. Materials Science in Semiconductor Processing, 4(6), 467-474.
[3]. KEYSIGHT Technologies. (2016). ADS Software and Reference Guide. Retrieved from www.keysight.com
[4]. Mamidala, J. K., Vishnoi, R., & Pandey, P. (2016). Tunnel Field-effect transistors (TFET): Modelling and Simulation. John Wiley & Sons.
[5]. Marani, R., & Gina Perri, A. (2014). Modelling of CNTFETs for computer aided design of A/D electronic circuits. Current Nanoscience, 10(3), 326-333.
[6]. Marani, R., & Perri, A. G. (2015). The next generation of FETs: CNTFETs. arXiv preprint arXiv:1511.01356.
[7]. Marani, R., & Perri, A. G. (2016a). Analysis of CNTFETs Operating in SubThreshold Region for Low Power Digital Applications. ECS Journal of Solid State Science and Technology, 5(2), M1-M4.
[8]. Marani, R., & Perri, A. G. (2016b). A DC Thermal Model of Carbon Nanotube Field Effect Transistors for CAD Applications. ECS Journal of Solid State Science and Technology, 5(8), M3001-M3004.
[9]. Marani, R., & Perri, A. G. (2016c). A simulation study of analogue and logic circuits with CNTFETs. ECS Journal of Solid State Science and Technology, 5(6), M38-M43.
[10]. Marani, R., & Perri, A. G. (2017). Effects of Temperature dependence of energy bandgap on I–V characteristics in CNTFETs Models. International Journal of Nanoscience, 16(05n06), 1750009.
[11]. Perri, A. G (2016). Fondamenti di Dispositivi Elettronici, 2thEdition.
[12]. Prasertsuk, K., Tanaka, S., Tanikawa, T., Shojiki, K., Kimura, T., Miura, A., ... & Suemitsu, T. (2016, June). MOVPE growth of N-polar GaN/Al x Ga 1− x N/GaN heterostructure on small off-cut substrate for flat interface. In Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016 (pp. 1-2). IEEE.
[13]. Roblin, P., & Rohdin, H. (2002). High-speed Heterostructure Devices: From Device Concepts to Circuit Modeling. Cambridge University Press.
[14]. Statz, H., Newman, P., Smith, I. W., Pucel, R. A., & Haus, H. A. (1987). GaAs FET device and circuit simulation in SPICE. IEEE Transactions on Electron Devices, 34(2), 160- 169.
[15]. Sajjad, R. N., Radhakrishna, U., Antoniadis, D. (2017). MIT TFET compact model including the impacts of non-idealities 1.0.0. NanoHub Publications.
[16]. Wolfspeed. (2017). HEMT CGH09120 package model, version 1 and datasheet retrieved from www.wolfspeed.com

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