The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device

Nitin Sachdeva*, Dr.Munish Vashishath**, Dr.P.K.Bansal***


This paper explores the impact of lightly doped (LD) and heavily doped (HD) substrates ona Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with 40nm Gate length. The influence of varying the p-type substrate doping 15 18 -3 concentration (from 10 to 10 cm ) is investigated in terms of the drain current, substrate current, sub-threshold current, on-off current ratio, sub-threshold swing and threshold voltage. The simulation results show that the lightly doped substrate devices with high work-function gives improvedoff state leakage current. It has also been observed that LD devices have high drain current even on low gate oxide thickness. All the simulation & design work has been done in SILVACO TCAD software.


Technology Computer Aided Design (TCAD), Complementary Metal-Oxide Semiconductor (CMOS), Metal Oxide Semiconductor Field Effect Transistor [MOSFET], SILVACO, N-type Metal Oxide Semiconductor [NMOS].

How to Cite this Article?

Sachdeva. N., Munishvashishath and Bansal.P.K (2018). The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device. i-manager's Journal on Electronics Engineering, 8(2), 20-26.


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