JMS_V2_N1_RP1
Effect Of Compositional Variation Of The Physical Parameters Of Ge-Se-In Glass System
Surbhi Sharma
Amit Sarin
Navjeet Sharma
Journal on Material Science
2347–615X
2
1
1
6
Chalcogenide, Cohesive Energy, Glass transition temperature, Lone pair electrons, Heat of Atomization
In this paper an attempt has been made to theoretically find the variation of some important parameters of one of the arsenic fre Ge-Se glass system by the addition of In content. Various parameters like co-ordination number, floppy modes, bond energy, electro negativity, heat of atomization, cohesive energy and glass transition temperature have been calculated for Ge Se In (x=0,1,2,3,4,5,6) glass system. Glass transition temperature (Tg) is calculated by using 16 84-x x two approaches i.e. Tichy-Ticha and Lankhorst approaches. Tg seems to be increasing in theoretical calculations while average single bond energy is decreasing with the increase in the content of In.
April - June 2014
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