<article_id>jes.6.1.13893</article_id>
<article_title>Effect of Halo Implant and Threshold Implant on Sub-Threshold Current and Substrate Current of MOSFET</article_title>
<author>Nitin Sachdeva</author>
<author>Munish Vashishath</author>
<author>P.K.Bansal</author>
<journal_title>Journal on Embedded Systems</journal_title>
<issn>2278-7895</issn>
<volume>6</volume>
<issue>1</issue>
<first_page>23</first_page>
<last_page>29</last_page>
<doi>10.26634/jes.6.1.13893</doi>
<keywords>MOSFET, SILVACO, Athena, Atlas ,TCAD</keywords>
<abstract>In this paper, the concentration of halo implant and threshold implant has been varied to estimate the sub-threshold leakage current and substrate current of the MOSFET. A lightly doped NMOS has been designed having channel length of 40 nm in Athena and simulated in Atlas of Silvaco TCAD tool. After simulation results, it has been observed that as the threshold implant and halo implant concentrations are increased, there is a decrease in both off-state sub-threshold leakage and substrate current as required for an ideal MOSFET. Other parameters like ON current, DIBL, and threshold voltage have also been estimated.</abstract>
<publication_date>July - December 2017</publication_date>
<copyright>Copyright &copy; 2017 i-manager publications. All rights reserved.</copyright>
<publisher>i-manager Publications</publisher>
<article_url>http://www.imanagerpublications.com/Article.aspx?ArticleId=13893</article_url>