jele.8.1.13837 Silicon-Germanium Hbt Technology and Applications: A Review Roberto Marani Anna Gina Perri Journal on Electronics Engineering 2249–0760 8 1 35 53 10.26634/jele.8.1.13837 SiGe HBT, BiCMOS Technology, TCAD-based Simulation The aim of this review paper is to define the role of SiGe HBTs within the Technology Revolution that will lead to a globally interconnected smart world. At first, the authors have presented the recent developments of SiGe BiCMOS technologies and their applications to unit circuit blocks and integrated solutions. Then modern HBT device structures, technological aspects, scaling strategies, design issues, and future directions are also discussed. TCAD-based simulations predict that SiGe HBTs with cut-off and maximum oscillation frequencies of 780 GHz and 2 THz, respectively will become feasible by the year 2030. September – November 2017 Copyright © 2017 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=13837