JELE_V7_N2_RP1 Wagah F. Mohamad Munther N. Al-Tikriti Bilal Altrabsheh Journal on Electronics Engineering 2249 – 0760 7 2 1 7 Amorphous Silicon Germanium, a-SiGe/a-Si, Solar Cell, Optical Energy Gap, Quantum Efficiency, Annealing Temperature, Absorption Coefficient, Urbach Energy Many samples of amorphous silicon germanium thin films had been fabricated using vacuum thermal deposition technique. Some of the samples are deposited on glass substrates; the others are on Si wafers. The effect of annealing temperature and germanium quantity on the structural and optoelectronic properties are studied and explained. The results obtained from X-ray diffraction show that films are deposited as amorphous structure. The films deposited on glass o substrate start polycrystalline transformation at annealing temperature around 600 C, while the others deposited on Si o o wafer start the transformation near to 655 C and with best results at 830 C. Increasing the germanium quantity from x= 0 to x= 0.3 leads to the reduction of optical energy gap. The behavior of x=0.3 germanium sample gives, somewhat, better quantum efficiency, higher photogenerated current with reasonable output voltage, but higher leakage current. The quantum efficiency tends to decrease with the increase of the wavelength λ and the absorption coefficient α increases with the increase of the quantity of Ge. December 2016 - February 2017 Copyright © 2017 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=11407