JELE_V5_N3_RP5 Nitu Rao Vimal Kumar Mishra R.K. Chauhan Journal on Electronics Engineering 2249 – 0760 5 3 35 38 Silicon Insulator Metal Oxide Semiconductor Field Effect Transistor (SOI MOSFET), Partially Depleted SOI MOSFET, Fully Depleted SOI MOSFET, Tunnel Diode Body Contact SOI MOSFET, Floating Body Effect, I on and I off current. In this paper Tunnel Diode Body Contact (TDBC) SOI p-MOSFET with low off-state leakage current is proposed for low power -13 digital application. The device shows off-state current with a drain voltage of 0.5V as about equal to 3.37×10 A -4 9 (33.7pA) and on-state current as about equal to 1.5×10 A (0.15mA) so that on to off-state current ratio is about 10 . This paper also includes the study of different type of SOI MOSFET namely Partially Depleted SOI (PD SOI), Full Depleted SOI (FD SOI) for low power digital application. This paper also includes the comparison between Partially Depleted TDBCS SOI n- MOSFET and proposed TDBC SOI p-MOSFET. March – May 2015 Copyright © 2015 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=3396