JELE_V5_N1_A2 Nitu Rao Vimal Kumar Mishra Chauhan R.K. Journal on Electronics Engineering 2249 – 0760 5 1 6 12 SOI MOSFET (Silicon on Insulator Oxide Semiconductor Field Effect Transistor), FD SOI (Fully Depleted SOI MOSFET) MOSFET TDBC (Tunnel Diode Body Contact) MOSFET, Short Channel Effect, Floating Body Effect Several Metal Oxide Semiconductor (MOS) structures are discussed in this paper namely Silicon on Insulator (SOI) MOSFET, Partially Depleted (PD) SOI MOSFET, Fully Depleted (FD) SOI MOSFET and tunnel diode body contact MOSFET. SOI MOSFET has certain advantages over conventional bulk MOSFET in terms of reduced short channel effect and drain induced barrier lowering. But SOI MOSFET has certain problems due to its buried oxide layer. So the comparative study of different SOI MOSFET over bulk MOSFET has been taken. To overcome the problem of Floating Body Effect and high series resistance different structures of FD SOI MOSFET are explained in brief. A Tunnel Diode Body Contact SOI MOSFET is also studied in this paper to overcome the problem of Floating Body Effect in PD SOI MOSFET. September – November 2014 Copyright © 2014 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=3317