JELE_V5_N1_A1 Review On Tunnel SRAM For Low Power Applications Alka Parihar Vimal Kumar Mishra Chauhan R.K. Journal on Electronics Engineering 2249 – 0760 5 1 1 5 Tunnel Static Random Access Memory (TSRAM), Negative Differential Resistance (NDR), Resonant Tunnel Diode (RTD) This paper presents a brief review on different types of Tunnel Static Random Access Memory that has been proposed for low power applications. Many authors and researchers have worked on tunnel SRAM, RTD/HFET low standby power, SRAM gain, cell and Bistable Body Tunnel SRAM and demonstrated the accomplished improvements in power dissipation and performance compared with previous designs for low-power memory operation. It broadly relates to SRAM cell employing a Tunnel Switched Diode (TSD) that acts as the storage medium and is controlled by a pass transistor. September – November 2014 Copyright © 2014 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=3316