JELE_V5_N1_A1
Review On Tunnel SRAM For Low Power Applications
Alka Parihar
Vimal Kumar Mishra
Chauhan R.K.
Journal on Electronics Engineering
2249 – 0760
5
1
1
5
Tunnel Static Random Access Memory (TSRAM), Negative Differential Resistance (NDR), Resonant Tunnel Diode (RTD)
This paper presents a brief review on different types of Tunnel Static Random Access Memory that has been proposed for low power applications. Many authors and researchers have worked on tunnel SRAM, RTD/HFET low standby power, SRAM gain, cell and Bistable Body Tunnel SRAM and demonstrated the accomplished improvements in power dissipation and performance compared with previous designs for low-power memory operation. It broadly relates to SRAM cell employing a Tunnel Switched Diode (TSD) that acts as the storage medium and is controlled by a pass transistor.
September – November 2014
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