Performance Comparison of Carbon Nanotube, Graphene Nano Ribon and Silicon Nanowire Transistors

JELE_V4_N1_A1 Performance Comparison of Carbon Nanotube, Graphene Nano Ribon and Silicon Nanowire Transistors S.B. Siddique T.M. Faruki B.C. Sarkar Md. Mahmudul Hasan Journal on Electronics Engineering 2249 – 0760 4 1 1 10 CNT, GNR, SNT, FETToy, VLS Siddique et.alanalyzed the performance potential of ballistic CNT, Graphene and Silicon Nanowire(SiNW) field effect transistors for future high-performance applications. The simulation is carried out on single sub-band top of the barrier model and the common off-current value is set as 10nA.The result shows that the CNT transistor is a good amplifier and the transconductance is high compared to GNR and SiNW transistors by showing higher frequency performance and higher transconductance. September – November 2013 Copyright © 2013 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=2508