JELE_V2_N3_RP5 Wagah F. Mohammad Nada Nabil Khatib Journal on Electronics Engineering 2249 – 0760 2 3 30 36 Schottky Barrier Diode, MOS structures, Current Mechanisms The energy band diagram and space charge regions of Schottky barrier (SB) solar cells are different from normal pn solar cells. Many facts and theories must be studied and developed to assist understanding and implementing SB solar cells. Few samples of SB devices were prepared by thermal deposition under vacuum then tested and studied carefully. An interfacial layer was introduced between metal and semiconductor. I-V and C—V are measured, drawn and discussed in details. The current transportation mechanism of the prepared samples is found to be of thermal mechanism type. The current transportation depends on the potential barrier height. From C— V characteristics, it is found that the potential barrier height is decreased as the interfacial oxide becomes thicker. March – May 2012 Copyright © 2012 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=1767