Semiconducting - Carbon Nanotube Field Effect Transistor Based Logic Gates/title> <author>V. Kannan</author> <author>V. Saravanan</author> <journal>Journal on Electronics Engineering</journal> <issn>2249 – 0760</issn> <volume>1</volume> <issue>4</issue> <first_page>56</first_page> <last_page>60</last_page> <keywords>CNTFET, MOSFET, High-k Material</keywords> <abstract>Carbon Nanotube Field Effect Transistors (CNTFET) are new nano-scaled devices for the digital circuits. In MOSFET based digital circuits when the channel length is much smaller than a micrometre is a challenge, and creates the problems in device fabrication, which limits advancing the integrated circuit. Small size of the MOSFET, below a few tens of nanometres creates the low Trans-conductance, gate oxide leakage, low ON-current, Mobility degradation and increased delay. Problems observed in the MOSFET, when size is reduced are avoided in CNTFET, since in case of CNTFET, carbon nanotube is used as channel and high-k material is used as gate dielectric. In this paper, the authors present the simulation results of semi-conducting Carbon Nanotube Field Effect Transistors based logic gates using HSPICE.</abstract> <date>June - August 2011</date> <copyright>Copyright © 2011 i-manager publications. All rights reserved.</copyright> <publisher>i-manager Publications</publisher> <article_url>http://www.imanagerpublications.com/Article.aspx?ArticleId=1512</article

JELE_V1_N4_RP9 Semiconducting - Carbon Nanotube Field Effect Transistor Based Logic Gates/title> <author>V. Kannan</author> <author>V. Saravanan</author> <journal>Journal on Electronics Engineering</journal> <issn>2249 – 0760</issn> <volume>1</volume> <issue>4</issue> <first_page>56</first_page> <last_page>60</last_page> <keywords>CNTFET, MOSFET, High-k Material</keywords> <abstract>Carbon Nanotube Field Effect Transistors (CNTFET) are new nano-scaled devices for the digital circuits. In MOSFET based digital circuits when the channel length is much smaller than a micrometre is a challenge, and creates the problems in device fabrication, which limits advancing the integrated circuit. Small size of the MOSFET, below a few tens of nanometres creates the low Trans-conductance, gate oxide leakage, low ON-current, Mobility degradation and increased delay. Problems observed in the MOSFET, when size is reduced are avoided in CNTFET, since in case of CNTFET, carbon nanotube is used as channel and high-k material is used as gate dielectric. In this paper, the authors present the simulation results of semi-conducting Carbon Nanotube Field Effect Transistors based logic gates using HSPICE.</abstract> <date>June - August 2011</date> <copyright>Copyright © 2011 i-manager publications. All rights reserved.</copyright> <publisher>i-manager Publications</publisher> <article_url>http://www.imanagerpublications.com/Article.aspx?ArticleId=1512</article_url>