JELE_V1_N1_RP3 Manish Kumar Anwar Hussain L.L.K. Singh Journal on Electronics Engineering 2249 – 0760 1 1 21 25 Power Dissipation, Switching Speed, Full Adder, Temperature, Supply Voltage Design of low power and high speed VLSI circuit has become a necessity for high performance portable devices operated by batteries. In this paper, power dissipation and switching speed of a 1- bit CMOS full adder in deep submicron and nanoscale technologies are analysed. Effects of variations in supply voltage and temperature on power dissipation and switching speed of a CMOS full adder are analysed. MICROWIND and DSCH 3.1 EDA tools are used for the schematic layout and simulation of a CMOS full adder in 0.4micro metre and 90 nm technologies using BSIM4 model. September - November 2010 Copyright © 2010 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=1195