JCIR_V4_N4_RP1 Pulla Reddy A. G. Sreenivasulu R. Veerabadra Chary Journal on Circuits And Systems 2322–035X 4 4 1 5 SRAM, Write Assist, Negative Bit Line, Stability The increased effect of process variation and increase in parasitic resistance and capacitance in nano scale technologies at lower supply voltages, and continuous increase in the size of SRAMs require additional techniques, such as write assist and read assist to improve the write-ability, readability, and stability of SRAM memories. The SRAM bit cell write-ability is very critical at lower voltages. The impact of the write assist technique is analysed in this paper which will improve the write-ability of the SRAM memory and also its impact on the performance, power, and area of the chip. The Negative Bit-line Voltage Bias scheme is discussed and executed at the transistor level using conventional SRAM cell (6T). With the write assist circuit, the implemented SRAM bit cell efficiently performs a write operation at lower voltages. The main objective of this paper is to improve the write-ability of the SRAM cell at lower supply voltage using Negative Bit-line Write Assist Circuit. September - November 2016 Copyright © 2016 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=12392