JCIR_V4_N2_RP3 Bal Krishan Sanjai Kumar Agarwal Sanjeev Kumar Journal on Circuits And Systems 2322–035X 4 2 22 29 Switching, Nanoelectronic, Diameter, Chirality, CNFET, MOSFET This paper explores the insights of the most outstanding application of carbon nanotube in electronic field, the carbon nanotube field-effect transistor (CNFET). The motivation of research in CNFET is fuelled by the unique electrical features of CNT, especially the semiconducting feature. Besides, the continuous effort to find future nanoelectronic device that can perform as excellent as MOSFET also push the research of CNFET to be more aggressive. The first section gives an overview of the structure of CNFET followed by the explanation of CNFET operation as a switching device. The next section provides the comparison between CNFET and MOSFET. In this paper, a comparison is being made between conventional MOSFET and different types of CNFETs, and finally concluded a future replacement of MOSFET. The major difference in CNFETs and MOSFET is that it has CNT in channel instead of Silicon. CNFETs show improved characteristics with scaling of technology. CNFET bandgap is directly affected by its chirality and diameter, which is the biggest advantage over MOSFETs. The study of various types of CNFETs comparison has been made in this paper. March - May 2016 Copyright © 2016 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=8099