JCIR_V4_N1_RP4 M. Kavitha T. Govindaraj Journal on Circuits And Systems 2322–035X 4 1 20 26 Power Gating, Leakage, Data Retention, Charge Recycling In this modern era, the challenge for IC designers is to maintain a prolonged battery lifetime in portable devices as power consumption is soaring with increased functionality and operating frequency. Excessive power consumption is the major barrier to the advancement of nanoscale CMOS VLSI circuits. Leakage currents are important sources of power consumption in sub-nanometre regime designs. The main sources of leakage are sub threshold leakage, gate leakage, gate induced drain leakage and junction leakage. Sub threshold leakage is the major contributor of static power and minimizing this component is more important in order to alleviate static power. The portable electronic gadgets like smartphones, tablet computers, etc., generally has much longer stand-by period than the operating period. Therefore an increased stand-by current wastes battery power seriously due to leakage. Power gating techniques help to minimize the leakage currents and increase the performance of integrated circuits. The basic strategy of power gating is to provide two power modes, a sleep mode and an active mode. The goal is to switch between these modes at the appropriate time and in the appropriate manner to maximize power savings while decreasing the impact to performance. This paper gives an overview of power gating techniques for controlling static power dissipation and retaining data in stand by periods. December 2015 - February 2016 Copyright © 2016 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=6032