JCIR_V2_N2_RP4 V. Vijayakumar R. Seshasayanan Journal on Circuits And Systems 2322–035X 2 2 26 32 DC Illumination, Quantum Dot Transistor(QDT), Photoconductive Effect, 2DEG, Sheet Concentration, Gallium Arsenide (GaAs) The DC performance of the Quantum Dot Transistor under illumination is studied and presented in this paper. A device structure consisting of Quantum Dots(QD) in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I-V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been calculated, plotted and discussed. The Transfer Characteristics of Quantum Dot Transistor without and with illumination, Optical Response of Quantum Dot Transistor, and sheet concentration of the device is also calculated, plotted and discussed. March - May 2014 Copyright © 2014 i-manager publications. All rights reserved. i-manager Publications http://www.imanagerpublications.com/Article.aspx?ArticleId=2976