A Highly Durable Double Edge Triggered D-FlipFlop Based Shift Registers using 10nM CNTFETTechnology

Ravi T.*, Kannan .V**
* Research Scholar, Sathyabama University, Chennai.
** Principal, Jeppiaar Institute of Technology, Kunnam, Chennai.
Periodicity:June - August'2013
DOI : https://doi.org/10.26634/jele.3.4.2392

Abstract

In this paper, a highly durable Double Edge Triggered D-Flip Flop based Serial in Serial Out (SISO), Serial in Parallel Out (SIPO), Parallel In Serial Out (PISO) and Parallel In Parallel Out (PIPO) shift registers are designed using 10nM Carbon Nano Tube Field Effect Transistor (CNTFET) technology. The CNTFET is a cutting edge device to overcome the current CMOS technology for its excellent electrical properties. To evaluate the durability, shift registers using CNTFET are analysed and the transient analysis are depicted. Power consumption, delay, PDP, rise time and fall time are evaluated using HSPICE with 1GHz operating frequency.

Keywords

CNTFET, Delay, DETFF, Fall Time, MOSFET, PISO, PIPO, Power, PDP, Rise Time, SISO, SIPO, VLSI.

How to Cite this Article?

Ravi, T., and Kannan, V., (2013). A Highly Durable Double Edge Triggered D-flip Flop Based Shift Registers Using 10nm Cntfet Technology. i-manager’s Journal on Electronics Engineering, 3(4), 4-12. https://doi.org/10.26634/jele.3.4.2392

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