A Comparison of CNTFET Models through a Simulation Study of Digital Circuits

Roberto Marani*, Anna Gina Perri**
*Researcher, Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy.
**Full Professor of Electronics and Head of Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, Italy.
Periodicity:December - February'2019

Abstract

In this paper we present a simulation study in order to carry out static and dynamic analysis of CNTFET-based digital circuits, introducing in the semi-empirical compact model for CNTFETs, already proposed, both the quantum capacitance effects and the sub-threshold currents. To verify the validity of the obtained results, they are compared with those of the Stanford- Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET). This comparison is made through some simulations of digital circuits. In particular we consider XOR gate, but emphasizing that the proposed procedure can be applied to any logic gate based on CNTFET. As regards the static conditions, the two models behave in a manner virtually identical, while, as regards the dynamic analysis, we have remarkable differences between two models in terms of propagation delays and rise and fall times.

Keywords

Nanoelectronic Devices, Carbon Nanotube Field Effect Transistors, Modeling Device, Digital Circuits, Computer Aided Design, ADS

How to Cite this Article?

Marani,R.,Perri,A.G.(2019).A Comparison of CNTFET Models through a Simulation Study of Digital Circuits.i-manager’s Journal on Electronics Engineering,9(2),1-11.

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