DC Analysis of Silicon Plated Germanium Pin Diode

Shivangi Sonkar*, R.K. Chauhan**
PG Scholar, Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, India.
Professor, Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, India.
Periodicity:December - February'2018
DOI : https://doi.org/10.26634/jele.8.2.14139


In this paper, a parametric study of silicon based PIN diode and Silicon Plated Germanium (SPG) PIN diode is performed th and comparative study is presented. SPG is a germanium diode containing 1/10 width of N+ region doped with silicon. The comparative study is performed on different parameters such as P+ layer and N+ layer concentration, Intrinsic layer thickness, P+ region and N+ region width and Intrinsic region width. The results obtained from simulation shows that the forward current conduction of SPG PIN diode is greater than silicon device and hence the resistance offered by SPG is far less than silicon device . The whole work of this paper is done with the help of SILVACO simulator tool.


Silicon Diodes, SPG, Width, Current, Concentration.

How to Cite this Article?

Sonkar. S and Chauhan. R.K (2018). DC Analysis of Silicon Plated Germanium Pin Diode. i-manager's Journal on Electronics Engineering, 8(2), 39-43. https://doi.org/10.26634/jele.8.2.14139


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