DC Analysis of Silicon Plated Germanium Pin Diode

Shivangi Sonkar*, R.K. Chauhan**
PG Scholar, Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, India.
Professor, Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, India.
Periodicity:December - February'2018
DOI : https://doi.org/10.26634/jele.8.2.14139

Abstract

In this paper, a parametric study of silicon based PIN diode and Silicon Plated Germanium (SPG) PIN diode is performed th and comparative study is presented. SPG is a germanium diode containing 1/10 width of N+ region doped with silicon. The comparative study is performed on different parameters such as P+ layer and N+ layer concentration, Intrinsic layer thickness, P+ region and N+ region width, and Intrinsic region width. The results obtained from simulation shows that the forward current conduction of SPG PIN diode is greater than silicon device and hence, the resistance offered by SPG is far less than silicon device . The whole work of this paper is done with the help of SILVACO simulator tool.

Keywords

Silicon Diodes, SPG, Width, Current, Concentration.

How to Cite this Article?

Sonkar. S and Chauhan. R.K (2018). DC Analysis of Silicon Plated Germanium Pin Diode. i-manager's Journal on Electronics Engineering, 8(2), 39-43. https://doi.org/10.26634/jele.8.2.14139

References

[1]. Aditya, A., Khandelwal, S., Mukherjee, C., Khan, A., Panda, S., & Maji, B. (2015, March). Search of appropriate semiconductor for PIN Diode fabrication in terms of resistance analysis. In Recent Developments in Control, Automation and Power Engineering (RDCAPE), 2015 International Conference on (pp. 61-65). IEEE.
[2]. Doherty, B. (1998). MicroNotes: PIN Diode Fundamentals. Watertown, MA: Microsemi Corp., MicroNote Series, 701.
[3]. Iturri-Hinojosa, A., Resendiz, L. M., & Torchynska, T. V. (2010). Numerical analysis of the performance of pin diode microwave switches based on different semiconductor materials. Int. J. Pure Appl. Sci. Technol, 1(2), 93-99.
[4]. Jubadi, W. M., & Noor, S. N. M. (2010, October). Simulations of variable I-layer thickness effects on silicon PIN diode IV characteristics. In Industrial Electronics & Applications (ISIEA), 2010 IEEE Symposium on (pp. 428- 432). IEEE.
[5]. Leenov, D. (1964). The silicon PIN diode as a microwave radar protector at megawatt levels. IEEE Transactions on Electron Devices, 11(2), 53-61.
[6]. Shuhaimi, N. I., Mohamad, M., Jubadi, W. M., Tugiman, R., Zinal, N., & Zin, R. M. (2010, June). Comparison on IV performances of Silicon PIN diode towards width variations. In Semiconductor Electronics (ICSE), 2010 IEEE International Conference on (pp. 12-14). IEEE.
[7]. Silvaco International. (2015). ATLAS User's Manual: Device Simulation Software. Silvaco International, Santa Clara.
[8]. Sze, S. M., & Ng, K. K. (2007). Physics of semiconductor devices, Hoboken. New Jersey: John Wiley &, 163, 8-5.
If you have access to this article please login to view the article or kindly login to purchase the article

Purchase Instant Access

Single Article

North Americas,UK,
Middle East,Europe
India Rest of world
USD EUR INR USD-ROW
Pdf 35 35 200 20
Online 35 35 200 15
Pdf & Online 35 35 400 25

Options for accessing this content:
  • If you would like institutional access to this content, please recommend the title to your librarian.
    Library Recommendation Form
  • If you already have i-manager's user account: Login above and proceed to purchase the article.
  • New Users: Please register, then proceed to purchase the article.