Abstract

The increased effect of process variation and increase in parasitic resistance and capacitance in nano scale technologies at lower supply voltages, and continuous increase in the size of SRAMs require additional techniques, such as write assist and read assist to improve the write-ability, readability, and stability of SRAM memories. The SRAM bit cell write-ability is very critical at lower voltages. The impact of the write assist technique is analysed in this paper which will improve the write-ability of the SRAM memory and also its impact on the performance, power, and area of the chip. The Negative Bit-line Voltage Bias scheme is discussed and executed at the transistor level using conventional SRAM cell (6T). With the write assist circuit, the implemented SRAM bit cell efficiently performs a write operation at lower voltages. The main objective of this paper is to improve the write-ability of the SRAM cell at lower supply voltage using Negative Bit-line Write Assist Circuit.

Keywords
SRAM, Write Assist, Negative Bit Line, Stability.

Purchase Instant Access

PDF
10
USD

250
INR

HTML
10
USD

250
INR

Username / Email
Password
Don't have an account?  Sign Up
  • If you would like institutional access to this content, please recommend the title to your librarian.
  • If you already have i-manager's user account: Login above and proceed to purchase the article.
  • New Users: Please register, then proceed to purchase the article.

We strive to bring you the best. Your feedback is of great value to us. Feel free to post your comments and suggestions.